High Hole Injection for Nitrogen-Polarity AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

被引：3
作者：
Deng, Gaoqiang [1 ]
Zhang, Lidong [1 ]
Niu, Yunfei [1 ]
Yu, Jiaqi [1 ]
Ma, Haotian [1 ]
Yang, Shixu [1 ]
Zuo, Changcai [1 ]
Qian, Haotian [1 ]
Duan, Bin [2 ]
Zhang, Baolin [1 ]
Zhang, Yuantao [1 ]
机构：
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
[2] Jilin Univ, Coll Phys, Changchun 130012, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2023年 / 44卷 / 07期
基金：
中国国家自然科学基金;
关键词：
Diode; hole injection; AlGaN; ultraviolet; RECOMBINATION; EFFICIENCY;
D O I：
10.1109/LED.2023.3279450
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High hole injection is desired for improving the performance of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs). In this work, we adopted a compositionally graded p-Aly1Ga1-y1N/Al0.85Ga0.15N superlattice (SL) structure in a nitrogen-polarity DUV LED. Our numerical simulation results show that this SL structure is very beneficial to the hole injection into the active region, and leads to a low turn-on voltage and device resistance. This is significant because a low device resistance means a low power consumption and a high wall-plug efficiency. Meanwhile, a DUV LED with compositionally graded SL has a peak internal quantum efficiency (72%) that is much higher than that of the reference DUV LED without an SL (56%). This work provides an attractive approach to effectively injecting holes into the active region of a nitrogen-polarity AlGaN-based DUV LED.
引用
收藏
页码：1076 / 1079
页数：4
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