Inverse design of high-NA metalens for maskless lithography

被引:11
作者
Chung, Haejun [1 ,2 ]
Zhang, Feng [3 ]
Li, Hao [5 ,6 ]
Miller, Owen D. D. [5 ,6 ]
Smith, Henry I. I. [3 ,4 ]
机构
[1] Hanyang Univ, Dept Elect Engn, Seoul 04763, South Korea
[2] Hanyang Univ, Dept Artificial Intelligence, Seoul 04763, South Korea
[3] LumArray Inc, 15 Ward St, Somerville, MA 02143 USA
[4] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[5] Yale Univ, Dept Appl Phys, New Haven, CT 06511 USA
[6] Yale Univ, Energy Sci Inst, New Haven, CT 06511 USA
基金
新加坡国家研究基金会;
关键词
inverse design; maskless lithography; metalens; TOPOLOGY OPTIMIZATION; PENALIZATION; FORMULATION; COMPACT;
D O I
10.1515/nanoph-2022-0761
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We demonstrate an axisymmetric inverse-designed metalens to improve the performance of zone-plate-array lithography (ZPAL), one of the maskless lithography approaches, that offer a new paradigm for nanoscale research and industry. First, we derive a computational upper bound for a unit-cell-based axisymmetric metalens. Then, we demonstrate a fabrication-compatible inverse-designed metalens with 85.50% transmission normalized focusing efficiency at 0.6 numerical aperture at 405 nm wavelength; a higher efficiency than a theoretical gradient index lens design (79.98%). We also demonstrate experimental validation for our axisymmetric inverse-designed metalens via electron beam lithography. Metalens-based maskless lithography may open a new way of achieving low-cost, large-area nanofabrication.
引用
收藏
页码:2371 / 2381
页数:11
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