Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes

被引:1
|
作者
Li, Jie [1 ,2 ]
Chae, Heeyeop [2 ,3 ]
机构
[1] Interuniv Microelect Ctr IMEC, B-3001 Heverlee, Belgium
[2] Sungkyunkwan Univ SKKU, Sch Chem Engn, Suwon 16419, South Korea
[3] Sungkyunkwan Univ SKKU, Sungkyunkwan Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea
基金
新加坡国家研究基金会;
关键词
Hydrogenated Amorphous Carbon; sp(2); sp(3) Ratio; Plasma Deposition; Plasma Characteristics; C-H FILMS; CAPACITIVELY-COUPLED PLASMAS; HARD MASK; SUBSTRATE-TEMPERATURE; OPTICAL-PROPERTIES; GROWTH; PECVD; LAYER; RATIO;
D O I
10.1007/s11814-023-1443-x
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing sp(2) as well as sp(3) carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applications. The properties of a-C:H films are known to be strongly dependent on the carbon bonding structure and are characterized using the sp(2)/sp(3) carbon hybridization ratio. The a-C:H films are typically deposited by plasma-enhanced chemical vapor deposition (PECVD) processes, and this review summarizes and discusses the relationship between the sp(2)/sp(3) ratio of a-C:H and plasma characteristics. The effects of temperature, radical density, ion density, and ion energy on the sp(2)/sp(3) ratio of a-C:H are investigated and summarized.
引用
收藏
页码:1268 / 1276
页数:9
相关论文
共 50 条
  • [41] Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition system
    Saha, Jhantu Kumar
    Bahardoust, Barzin
    Leong, Keith
    Gougam, Adel B.
    Kherani, Nazir P.
    Zukotynski, Stefan
    THIN SOLID FILMS, 2011, 519 (09) : 2863 - 2866
  • [42] Annealing of hydrogenated diamond-like carbon films deposited on ground electrode of plasma enhanced chemical vapor deposition system
    Yokota, Katsuhiro
    Nakatani, Takahiro
    Miyashita, Fumiyoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (9A): : 5901 - 5907
  • [43] Annealing of hydrogenated diamond-like carbon films deposited on ground electrode of plasma enhanced chemical vapor deposition system
    Yokota, Katsuhiro
    Nakatani, Takahiro
    Miyashita, Fumiyoshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (9 A): : 5901 - 5907
  • [44] Annealing effects on structural and electrical properties of fluorinated amorphous carbon films deposited by plasma enhanced chemical vapor deposition
    Yi, JW
    Lee, YH
    Farouk, B
    THIN SOLID FILMS, 2003, 423 (01) : 97 - 102
  • [45] Metrology and optical characterization of plasma enhanced chemical vapor deposition, (PECVD), low temperature deposited amorphous carbon films
    Ferrieu, F.
    Chaton, C.
    Neira, D.
    Beitia, C.
    Mota, L. Proenca
    Papon, A. M.
    Tarnowka, A.
    FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2007, 2007, 931 : 99 - +
  • [46] Hydrogenated amorphous carbon films deposited in an electron cyclotron resonance-chemical vapor deposition discharge reactor using acetylene
    Kim, BK
    Grotjohn, TA
    DIAMOND AND RELATED MATERIALS, 2000, 9 (3-6) : 654 - 657
  • [47] Properties of hydrogenated amorphous/nanocrystalline carbon films prepared by plasma enhanced chemical vapour deposition
    Huran, J.
    Zat'ko, B.
    Bohacek, P.
    Kobzev, A. P.
    Vincze, A.
    Malinovsky, L'
    Valovic, A.
    INNOVATIONS IN THIN FILM PROCESSING AND CHARACTERISATION (ITFPC 2009), 2010, 12
  • [48] HYDROGENATED AMORPHOUS-CARBON FILMS DEPOSITED BY LOW-FREQUENCY PLASMA CHEMICAL VAPOR-DEPOSITION AT ROOM-TEMPERATURE
    SHIMOZUMA, M
    TOCHITANI, G
    OHNO, H
    TAGASHIRA, H
    NAKAHARA, J
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (01) : 447 - 449
  • [49] Low density of defect states in hydrogenated amorphous carbon thin films grown by plasma-enhanced chemical vapor deposition
    Krishna, KM
    Ebisu, H
    Hagimoto, K
    Hayashi, Y
    Soga, T
    Jimbo, T
    Umeno, M
    APPLIED PHYSICS LETTERS, 2001, 78 (03) : 294 - 296
  • [50] SURFACE MODIFICATION OF HYDROGENATED AMORPHOUS CARBON (A-C: H) FILMS PREPARED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD)
    Xiao, Lihong
    Zhou, Eric
    Liu, Huanxi
    2015 China Semiconductor Technology International Conference, 2015,