共 50 条
Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes
被引:1
|作者:
Li, Jie
[1
,2
]
Chae, Heeyeop
[2
,3
]
机构:
[1] Interuniv Microelect Ctr IMEC, B-3001 Heverlee, Belgium
[2] Sungkyunkwan Univ SKKU, Sch Chem Engn, Suwon 16419, South Korea
[3] Sungkyunkwan Univ SKKU, Sungkyunkwan Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea
基金:
新加坡国家研究基金会;
关键词:
Hydrogenated Amorphous Carbon;
sp(2);
sp(3) Ratio;
Plasma Deposition;
Plasma Characteristics;
C-H FILMS;
CAPACITIVELY-COUPLED PLASMAS;
HARD MASK;
SUBSTRATE-TEMPERATURE;
OPTICAL-PROPERTIES;
GROWTH;
PECVD;
LAYER;
RATIO;
D O I:
10.1007/s11814-023-1443-x
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing sp(2) as well as sp(3) carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applications. The properties of a-C:H films are known to be strongly dependent on the carbon bonding structure and are characterized using the sp(2)/sp(3) carbon hybridization ratio. The a-C:H films are typically deposited by plasma-enhanced chemical vapor deposition (PECVD) processes, and this review summarizes and discusses the relationship between the sp(2)/sp(3) ratio of a-C:H and plasma characteristics. The effects of temperature, radical density, ion density, and ion energy on the sp(2)/sp(3) ratio of a-C:H are investigated and summarized.
引用
收藏
页码:1268 / 1276
页数:9
相关论文