Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes

被引:1
|
作者
Li, Jie [1 ,2 ]
Chae, Heeyeop [2 ,3 ]
机构
[1] Interuniv Microelect Ctr IMEC, B-3001 Heverlee, Belgium
[2] Sungkyunkwan Univ SKKU, Sch Chem Engn, Suwon 16419, South Korea
[3] Sungkyunkwan Univ SKKU, Sungkyunkwan Adv Inst Nanotechnol SAINT, Suwon 16419, South Korea
基金
新加坡国家研究基金会;
关键词
Hydrogenated Amorphous Carbon; sp(2); sp(3) Ratio; Plasma Deposition; Plasma Characteristics; C-H FILMS; CAPACITIVELY-COUPLED PLASMAS; HARD MASK; SUBSTRATE-TEMPERATURE; OPTICAL-PROPERTIES; GROWTH; PECVD; LAYER; RATIO;
D O I
10.1007/s11814-023-1443-x
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing sp(2) as well as sp(3) carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applications. The properties of a-C:H films are known to be strongly dependent on the carbon bonding structure and are characterized using the sp(2)/sp(3) carbon hybridization ratio. The a-C:H films are typically deposited by plasma-enhanced chemical vapor deposition (PECVD) processes, and this review summarizes and discusses the relationship between the sp(2)/sp(3) ratio of a-C:H and plasma characteristics. The effects of temperature, radical density, ion density, and ion energy on the sp(2)/sp(3) ratio of a-C:H are investigated and summarized.
引用
收藏
页码:1268 / 1276
页数:9
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