Elastic integrated electronics based on a stretchable n-type elastomer-semiconductor-elastomer stack

被引:21
|
作者
Shim, Hyunseok [1 ,2 ,3 ]
Sim, Kyoseung [4 ,5 ,6 ]
Wang, Binghao [7 ]
Zhang, Yongcao [2 ]
Patel, Shubham [1 ,4 ]
Jang, Seonmin [1 ,2 ]
Marks, Tobin J. J. [8 ,9 ]
Facchetti, Antonio [8 ,9 ,10 ]
Yu, Cunjiang [1 ,2 ,4 ,11 ,12 ]
机构
[1] Penn State Univ, Dept Engn Sci & Mech, University Pk, PA 16802 USA
[2] Univ Houston, Mat Sci & Engn Program, Houston, TX 77204 USA
[3] Pusan Natl Univ, Dept Elect Engn, Busan, South Korea
[4] Univ Houston, Dept Mech Engn, Houston, TX 77204 USA
[5] Ulsan Natl Inst Sci & Technol UNIST, Dept Chem, Ulsan, South Korea
[6] Ulsan Natl Inst Sci & Technol UNIST, Ctr Wave Energy Mat, Ulsan, South Korea
[7] Southeast Univ, Sch Elect Sci & Engn, Joint Int Res Lab Informat Display & Visualizat, Nanjing, Peoples R China
[8] Northwestern Univ, Dept Chem, Evanston, IL USA
[9] Northwestern Univ, Mat Res Ctr, Evanston, IL USA
[10] Flexterra Inc, Skokie, IL USA
[11] Penn State Univ, Dept Biomed Engn, University Pk, PA 16802 USA
[12] Penn State Univ, Mat Res Inst, Dept Mat Sci & Engn, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT; PERFORMANCE; FABRICATION; CIRCUITS;
D O I
10.1038/s41928-023-00966-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An elastomer-semiconductor-elastomer stack structure can allow an intrinsically brittle n-type organic semiconductor to be stretched by 50% and used to make fully stretchable complementary electronics. Elastic integrated electronics are of potential use in a range of emerging applications, particularly those that require devices that can form an interface with soft biological tissue. The development of such devices has typically focused on the creation of stretchy p-type semiconductors, and the lack of suitable stretchy n-type semiconductors limits the potential of stretchable integrated systems. Here we show that a brittle n-type organic semiconductor can be made mechanically stretchable by integrating into a stack with an elastomer-semiconductor-elastomer architecture. The structure suppresses the formation and propagation of microcracks and can be stretched by up to 50% with negligible loss of performance. It also improves the long-term stability of the semiconductor in an ambient environment. We use the n-type elastomer-semiconductor-elastomer stack, together with other stretchy electronic materials, to build elastic transistors, digital logic gates, complementary electronics, p-n photodetectors and an active matrix multiplexed deformable imager.
引用
收藏
页码:349 / 359
页数:11
相关论文
共 34 条
  • [31] Solution-Processable Low-Voltage and Flexible Floating-Gate Memories Based on an n-Type Polymer Semiconductor and High-k Polymer Gate Dielectrics
    Li, Jinhua
    Yan, Feng
    ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (15) : 12815 - 12820
  • [32] Fluorine Substituted Bithiophene Imide-Based n-Type Polymer Semiconductor for High-Performance Organic Thin-Film Transistors and All-Polymer Solar Cells
    Sun, Huiliang
    Tang, Yumin
    Guo, Han
    Uddin, Mohammad Afsar
    Ling, Shaohua
    Wang, Ruizhi
    Wang, Yingfeng
    Zhou, Xin
    Woo, Han Young
    Guo, Xugang
    SOLAR RRL, 2019, 3 (02)
  • [33] High photosensitivity performance vertical structured metal-semiconductor based ultraviolet photodetector using Ga2O3 thin film sputtered on n-type Si(100)
    Mohammed, Alghareeb Abbas Abdulhussein
    Lim, Way Foong
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2024, 308
  • [34] Ge1-xSix on Ge-based n-type metal-oxide semiconductor field-effect transistors by device simulation combined with high-order stress-piezoresistive relationships
    Lee, Chang-Chun
    Hsieh, Chia-Ping
    Huang, Pei-Chen
    Cheng, Sen-Wen
    Liao, Ming-Han
    THIN SOLID FILMS, 2016, 602 : 78 - 83