Facile construction of g-C3N4/MnWO4/NiS heterostructures for photocatalytic degradation of organic contaminates under visible light irradiation

被引：34

作者：

Khudhair, Entisar M. ^{[1
]}

Ammar, Saad H. ^{[2
,3
]}

Al-Najjar, Shahad Z. ^{[2
]}

Al-Jubouri, Sama M. ^{[1
]}

Mahdi, Ahmed S. ^{[4
]}

Jabbar, Zaid H. ^{[5
]}

机构：

[1] Univ Baghdad, Coll Engn, Dept Chem Engn, Baghdad, Iraq

[2] Al Nahrain Univ, Coll Engn, Dept Chem Engn, Baghdad, Iraq

[3] Univ Warith Al Anbiyaa, Coll Engn, Karbala, Iraq

[4] Minist Ind & Minerals, State Co Food Prod, Baghdad, Iraq

[5] Al Mustaqbal Univ Coll, Bldg & Construct Tech Engn Dept, Hillah 51001, Babylon, Iraq

来源：

MATERIALS LETTERS | 2023年 / 347卷

关键词：

g-C3N4; Heterojunction; Charge transfer; Photodegradation;

D O I：

10.1016/j.matlet.2023.134599

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Assembling of a new ternary heterojunction (g-C3N4/MnWO4/NiS) is reported here. As a result, the g-C3N4/ MnWO4/NiS exhibited numerous benefits, such as outstanding visible light absorption, high carrier separation, and therefore, boosted photodegradation performance (96.7% of methylene blue, MB) compared to g-C3N4, and MnWO4. The contact region between g-C3N4 and MnWO4 efficiently accomplishes rapid separation of charge carriers through NiS cocatalyst, creating binding sites between g-C3N4 and MnWO4 semiconductors. The mechanisms for the photocatalytic degradation over the g-C3N4/MnWO4/NiS heterostructure are suggested and verified.

引用

页数：5

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