Estimation of Both Junction Temperature and Load Current of IGBTs from Output Voltage of Gate Driver

被引：0
作者：
Yamasaki, Hiromu [1 ]
Hata, Katsuhiro [1 ]
Takamiya, Makoto [1 ]
机构：
[1] Univ Tokyo, 4-6-1 Komaba,Meguro Ku, Tokyo 1538505, Japan
来源：
IEEJ JOURNAL OF INDUSTRY APPLICATIONS | 2023年 / 12卷 / 03期
关键词：
digital gate driver; IGBT; junction temperature; load current; estimation; SENSITIVE ELECTRICAL PARAMETER;
D O I：
10.1541/ieejjia.22007728
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the online condition monitoring of IGBTs, a new estimation method of both the junction temperature (TJ) and the load current (IL) of IGBTs using a momentary high-Z gate driving (MHZGD) from the output voltage (VOUT) of the gate driver is proposed, which can be integrated into the gate driver ICs. TJ is estimated from VOUT difference during and after the MHZGD period, and IL is estimated from VOUT during MHZGD. In the 110 switching measurements at 11 different TJ's from 25 degrees C to 125 degrees C and 10 different IL's from 12.5 A to 80 A for each of the three IGBTs, TJ and IL estimation errors in a low test cost parameter determination method are +4.9 degrees C/-8.4 degrees C and +1.1 A/-4.3 A, respec-tively. In contrast, TJ and IL estimation errors in a parameter determination method with small error are +4.9 degrees C/-8.1 degrees C and +1.0 A/-1.8 A, respectively.
引用
收藏
页码：392 / 400
页数：9
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