Analysis of quantum effects in metal oxide semiconductor field effect transistor in fractal dimensions

The MOSFET is a semiconductor microelectronic single-chip used in different technical aspects in computer engineering and nanotechnology. However, there are many self-assembly micro- and nano-electronic processes generating fractal patterns where millions of metallic nanoparticles are self-assembled into fractal electronic circuits. This proves the importance of fractals in nano-devices such as MOSFET. In this letter, we study quantum effects on MOSFET in fractal dimensions based on the concept of "product-like fractal measure " introduced recently in literature by Li and Ostoja-Starzewski. This study shows that fractal quantum mechanical effects occurring in micro- and nanoelectronics deserve to be considered seriously.