Interplay of band energetics and photo/electro/chemical activity of SnO2 thin films

被引:5
作者
Kavan, Ladislav [1 ]
Zlamalova, Magda [1 ,2 ]
Mansfeldova, Vera [1 ]
Krysova, Hana [1 ]
Tarabkova, Hana [1 ]
Laskova, Barbora Pitna [1 ]
机构
[1] Czech Acad Sci, J Heyrovsky Inst Phys Chem, Dolejskova 3, Prague 8, Czech Republic
[2] Charles Univ Prague, Fac Sci, Dept Inorgan Chem, Hlavova 2030, Prague 12840, Czech Republic
来源
MONATSHEFTE FUR CHEMIE | 2024年 / 155卷 / 3-4期
关键词
Tin compounds; Nanostructures; Electrochemistry; Oxides; LAYERS; PHOTOELECTRODES; TRANSPARENT; DEPOSITION; OXIDES; TIO2;
D O I
10.1007/s00706-023-03145-5
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The ALD-SnO2 thin films are prepared at FTO and Au(111) substrates. Their investigation is referenced, if relevant, to a model system of SnO2 cassiterite (001) single crystal. Open questions about the photoelectrochemical activity and band energetics after calcination and UV-excitation are addressed. We analyze the data from AFM, Raman, Kelvin probe, photoelectrochemistry of water oxidation and electrochemical impedance spectroscopy (flatband potentials determined from Mott-Schottky plots) in aqueous and acetonitrile media. Calcination of ALD-SnO2 causes strong enhancement of work functions, surface coarsening, and decrease of band-gap.
引用
收藏
页码:325 / 331
页数:7
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