Silicon-Based Stretchable Structure via Parylene Kirigami Interconnection

被引:4
作者
Xu, Han [1 ,2 ]
Zhang, Meixuan [3 ]
Chen, Lang [3 ]
Zhang, Pan [3 ]
Jin, Yufeng [1 ,4 ]
Wang, Wei [2 ,4 ]
机构
[1] Peking Univ, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
[2] Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China
[3] Peking Univ, Sch Integrated Circuits, Beijing 100871, Peoples R China
[4] Natl Key Lab Sci & Technol Micro Nano Fabricat, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
Silicon; Integrated circuit interconnections; Young's modulus; Fabrication; Three-dimensional displays; Analytical models; Substrates; High-density stretchable silicon array; Parylene Kirigami structure; Parylene MEMS; wafer level; ELECTRONICS; FABRICATION; FORM;
D O I
10.1109/JMEMS.2022.3223059
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-performance stretchable electronics are attracting great attention due to the mechanical adaptability, but are still limited to achieving highly-integrable, high density, high-performance stretchable silicon-based electronics. This paper proposed a Parylene Kirigami structure as a stretchable interconnection to connect silicon (Si) units in an array. The equivalent Young's modulus and stretchability model of the Parylene Kirigami were developed and verified numerically and experimentally. As a preliminary demonstration, a Parylene Kirigami structure-based stretchable Si array (Parylene KiSS array) was successfully fabricated by the wafer-scale microelectromechanical systems (MEMS) process with a high Si areal coverage of 68.8 % and the stretchability of 31.0 +/- 1.1%. The equivalent Young's modulus of this Parylene KiSS array was 130.88 +/- 6.75 MPa, which was estimated precisely by the proposed model and was around 1000 times smaller than that of the intrinsic silicon. This MEMS process compatible stretchable electronics strategy can integrate Si-based high-performance chiplets, sensors and actuators to realize high-performance stretchable microsystems. [2022-0157]
引用
收藏
页码:82 / 90
页数:9
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