A Wet-Fusing Assembly Strategy for Forming Low Dark Current 2D/3D Perovskite X-Ray Detector on a Thin Film Transistor Backplane

Single-crystalline metal halide perovskite, due to its large X-ray attenuation coefficient, high carrier mobility, and facile fabrication properties, is considered as a promising candidate material for direct X-ray detectors. Despite the rapid development of high-sensitivity perovskite detectors, their practical application is still hindered by their high dark current levels and the lack of effective approach for assembling the perovskite photodetectors on thin-film transistor (TFT) backplane. Here, it is shown that, by using a supersaturated 2D perovskite precursor as a wet-fusing intermedia, a high-performance 2D/3D perovskite detector can be fabricated and simultaneously attached to the TFT backplane. The assembled 2D/3D heterostructure perovskite detector shows low dark current density, high sensitivity, and low dose detection limit. This work provides a viable route to realize a low-dose, high-resolution direct X-ray image sensor based on perovskite photodetectors. Despite the rapid development of high-sensitivity perovskite X-ray detectors, their practical application is still hindered by their high dark current levels and the lack of a practical approach to assembling the perovskite photodetectors with readout circuits. This work provides a viable route to realize perovskite integration with TFT without scarifying the high sensitivity.image