Vertical PtOx/Pt/β-Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage

被引：23

作者：

Farzana, Esmat ^{[1
]}

Roy, Saurav ^{[1
]}

Hendricks, Nolan S. ^{[1
,2
]}

Krishnamoorthy, Sriram ^{[1
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

[2] Air Force Res Lab, Sensors Directorate, Wright Patterson Afb, OH 45433 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 123卷 / 19期

关键词：

BARRIER DIODES; BALIGAS FIGURE; 001; BETA-GA2O3; MERIT;

D O I：

10.1063/5.0171876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate Schottky barrier engineering using PtOx/thin Pt Schottky contacts combined with edge termination using a high permittivity dielectric (ZrO2) field-plate for high-voltage vertical beta-Ga2O3 diodes. A systematic study of baseline bare Pt/beta-Ga2O3, PtOx/thin Pt/beta-Ga2O3, and PtOx/beta-Ga2O3 Schottky diode characteristics was performed, which revealed that the PtOx/thin Pt/beta-Ga2O3 contact can combine the advantages of both PtOx and Pt, allowing better reverse blocking performance than plain metal Pt/beta-Ga2O3 Schottky diodes and lower turn-on voltage than plain oxidized metal PtOx/beta-Ga2O3 ones. Moreover, the thin Pt interlayer in the PtOx/thin Pt/beta-Ga2O3 anode contact configuration, deposited by e-beam deposition, also provides plasma-free interface at the Schottky junction as opposed to the direct sputter deposited PtOx contacts of the PtOx/beta-Ga2O3 diodes. We further implemented a high permittivity dielectric (ZrO2) field plate in PtOx/thin Pt/beta-Ga2O3 diodes that assisted in edge-field management and enabled a breakdown voltage to similar to 2.34 kV. These results indicate that the PtOx/thin Pt/beta-Ga2O3 Schottky contact, combined with a high permittivity field-plate, will be promising to enable Schottky barrier engineering for high-performance and efficient vertical beta-Ga2O3 power switches.

引用

页数：6

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