Broadband Near-Infrared Luminescence in Garnet Y3Ga3MgSiO12: Cr3+ Phosphors

被引：65

作者：

Jiang, Lipeng ^{[1
]}

Jiang, Xue ^{[1
]}

Zhang, Liangliang ^{[2
]}

Liu, Quansheng ^{[3
]}

Mi, Xiaoyun ^{[3
]}

Yu, Zhan ^{[4
]}

Lv, Guocai ^{[5
]}

Su, Yanjing ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Corros & Protect Ctr, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China

[3] Changchun Univ Sci & Technol, Sch Mat Sci & Engn, Changchun 130022, Peoples R China

[4] Zhongguancun Key Lab Solid State Lighting, Beijing 100083, Peoples R China

[5] Univ Sci & Technol Beijing, Basic Expt Ctr Nat Sci, Beijing 100083, Peoples R China

来源：

INORGANIC CHEMISTRY | 2023年 / 62卷 / 10期

关键词：

EFFICIENT;

D O I：

10.1021/acs.inorgchem.2c04319

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Broadband near-infrared (NIR) phosphors are the critical component of phosphor converted NIR light-emitting diode (LED) light sources. However, there are still a lack of NIR phosphors with excellent external quantum efficiency (EQE) and thermal stability. Here, we report a highly efficient broadband NIR phosphor Y3Ga3MgSiO12: Cr3+. The optimized phosphor yields an internal quantum efficiency (IQE) and an EQE of 79.9 and 33.7%, respectively. The integrated emission intensity still remains at 84.4% of that at room temperature when heated to 423 K. A broadband NIR LED lamp was made by combining as-prepared phosphor and a blue InGaN LED chip, which shows an output power of 89.8 mW with a photoelectric conversion efficiency of 17.1% driven at 525 mW input power. Our research provides a promising NIR phosphor with high efficiency broadband for the NIR light source.

引用

页码：4220 / 4226

页数：7

共 45 条

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