共 45 条
Biodegradable and flexible artificial nociceptor based on Mg/MgO threshold switching memristor
被引:26
作者:

Cao, Yaxiong
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Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China

Wang, Saisai
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h-index: 0
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Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China

Wang, Rui
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Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China

Xin, Yuhan
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Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China

Peng, Yaqian
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Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China

Sun, Jing
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机构:
Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China

Yang, Mei
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h-index: 0
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Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China

Ma, Xiaohua
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h-index: 0
机构:
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China

Lv, Ling
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h-index: 0
机构:
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China

Wang, Hong
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h-index: 0
机构:
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China

Hao, Yue
论文数: 0 引用数: 0
h-index: 0
机构:
Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China
机构:
[1] Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China
[2] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Peoples R China
基金:
中国国家自然科学基金;
关键词:
artificial nociceptor;
threshold switching;
biodegradable;
physically transient;
MEMORY;
SENSITIZATION;
D O I:
10.1007/s40843-022-2292-7
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
As an important receptor located in the skin, a nociceptor is capable of detecting noxious stimuli and sending warning signals to the central nervous system to avoid tissue damage, thus inspiring the development of artificial nociceptors for electronic receptors. Recently, memristors have attracted increasing attention for developing artificial nociceptors due to the simplicity of the artificial nociceptive system. However, the realization of artificial nociceptors with biocompatibility and biodegradability in a single memristive device remains a challenge. Herein, a fully biocompatible and biodegradable threshold switching (TS) memristor consisting of W/MgO/Mg/W configuration was proposed as an artificial nociceptor. The device showed unidirectional TS characteristics with stable electrical performance under bending conditions. Critical nociceptor behaviors, including threshold, relaxation, no adaptation, allodynia, and hyperalgesia, were successfully demonstrated in the memristive nociceptor. Meanwhile, an optoelectronic nociceptor system was built by the integration of a photoresistor and the memristor. Importantly, the devices transferred on a biodegradable polyvinyl acetate substrate as physically transient electronics could completely dissolve in deionized water, simulating the decomposition of skin necrosis. This study provides a novel route toward developing fully biocompatible and biodegradable artificial nociceptors for promising applications in implantable and wearable electronics and secure bio-integrated systems.
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收藏
页码:1569 / 1577
页数:9
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