Solar-blind photodetectors fabricated on β-Ga2O3 films deposited on 6° off-angled sapphire substrates

被引：20
作者：
Hu, Zhiguo [1 ,2 ]
Cheng, Qian [1 ,2 ]
Zhang, Tao [1 ,2 ]
Zhang, Yuxuan [1 ,2 ]
Tian, Xusheng [1 ,2 ]
Zhang, Yachao [1 ,2 ]
Feng, Qian [1 ,2 ]
Xing, Wang [3 ]
Ning, Jing [1 ,2 ]
Zhang, Chunfu [1 ,2 ]
Zhang, Jincheng [1 ,2 ]
Hao, Yue [1 ,2 ]
机构：
[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond Te, Xian 710071, Peoples R China
[2] Xidian Univ, Sch Microelect, Shaanxi Joint Key Lab Graphene, Xian 710071, Peoples R China
[3] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modul, Nanjing 210016, Peoples R China
来源：
JOURNAL OF LUMINESCENCE | 2023年 / 255卷
基金：
中国国家自然科学基金;
关键词：
Solar-blind photodetector; MOCVD; Temperature; THIN-FILMS; GROWTH; TEMPERATURE; HETEROJUNCTION; PERFORMANCE;
D O I：
10.1016/j.jlumin.2022.119596
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper, the beta-Ga2O3 films were deposited on 6 degrees off-angled (towards <11-20> direction) (0001) sapphire substrates by MOCVD, and the MSM structure solar-blind photodetectors were fabricated. The effects of growth temperature on the surface morphology, elemental composition, crystalline quality and optical properties of beta-Ga2O3 thin films were investigated. As the substrate temperature increased from 650 to 850 degrees C, the surface RMS roughness of the film gradually increased, and the bandgap was 4.71, 4.73 and 4.76 eV, respectively. In addition, the photodetector fabricated on beta-Ga2O3 film at 850 degrees C exhibited a large photocurrent (Iphoto) of 0.59 mA, a high responsivity (R) of 1.26 A/W, a high photo-to-dark current ratio (PDCR) of 9.3 x 10(4), a detectivity (D*) of 2.5 x 10(12) Jones, and a fast response recovery time of 0.38 s.
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页数：7
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