Prediction of crack initiation in single-crystal sapphire during ultra-precision machining using MD simulation-based slip/fracture activation model

被引:3
作者
Kwon, Suk Bum [1 ]
Nagaraj, Aditya [1 ]
Kim, Dae Nyoung [1 ]
Xi, Dalei [2 ]
Du, Yiyang [2 ]
Kim, Woo Kyun [2 ]
Min, Sangkee [1 ]
机构
[1] Univ Wisconsin Madison, Dept Mech Engn, Madison, WI 53706 USA
[2] Univ Cincinnati, Dept Mech & Mat Engn, Cincinnati, OH 45221 USA
来源
PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY | 2024年 / 86卷
基金
美国国家科学基金会;
关键词
Ductile-to-brittle transition; Molecular dynamics; Single-crystal sapphire; Slip/fracture activation model; Ultra-precision machining; MOLECULAR-DYNAMICS SIMULATION; PROPAGATION; MECHANISMS; BEHAVIOR;
D O I
10.1016/j.precisioneng.2023.12.007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, material deformation during ultra-precision machining (UPM) on the C-, R-, and A-planes of sapphire was investigated using the slip/fracture activation model where the likelihood of activation of individual plastic deformation and fracture systems on different crystallographic planes was calculated. The stress data obtained from molecular dynamics (MD) simulations were utilized, and the slip/fracture activation model was developed by incorporating the principal stresses in calculating the plastic deformation and fracture cleavage parameters. The analysis methodology was applied to study material deformation along various cutting orientations in sapphire. The stress field at crack initiation during UPM on C-, R-, and A-planes of sapphire was calculated using molecular dynamics (MD) simulations. An equation describing the relationship between crack initiation and its triggering parameters was formulated considering the systems' plastic deformation and cleavage fractures. The model can qualitatively predict the crack initiations for various cutting orientations. The proposed model was verified through ultra-precision orthogonal plunge cut experiments along the same cutting orientations as in the MD simulations.
引用
收藏
页码:265 / 275
页数:11
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