Ultrahigh-speed silicon-based modulators/photodetectors for optical interconnects

被引：1
|
作者：
Hu, Xiao [1 ,2 ]
Wu, Dingyi [1 ]
Zhang, Hongguang [1 ]
Chen, Daigao [1 ,2 ]
Wang, Lei [1 ,2 ]
Xiao, Xi [1 ,2 ,3 ]
Yu, Shaohua [1 ,2 ,3 ]
机构：
[1] Wuhan Res Inst Posts & Telecommun, Natl Informat Optoelect Innovat Ctr, Wuhan 430074, Peoples R China
[2] China Informat & Commun Technol Grp Corp CICT, State Key Lab Opt Commun Technol & Networks, Wuhan 430074, Peoples R China
[3] Peng Cheng Lab, Shenzhen 518055, Peoples R China
来源：
2023 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION, OFC | 2023年
基金：
中国国家自然科学基金;
关键词：
GERMANIUM PHOTODETECTOR;
D O I：
10.1364/OFC.2023.Th3B.2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present our recent progress on the silicon photonic devices for next-generation optical interconnects. The 300 Gbit/s silicon microring modulator, 200 Gbit/s Ge EAM and 408 Gbit/s Ge-Si photodetector with the highest bandwidth of 110 GHz are presented. Single-chip 1.6 Tbit/s silicon-based optical transceiver is also demonstrated.
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页数：3
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