Graphene-based field-effect transistors for biosensing: where is the field heading to?

被引:17
作者
Szunerits, Sabine [1 ,2 ]
Rodrigues, Teresa [1 ,2 ]
Bagale, Rupali [1 ]
Happy, Henri [1 ]
Boukherroub, Rabah [1 ]
Knoll, Wolfgang [2 ]
机构
[1] Univ Lille, Univ Polytech Hauts de France, CNRS, Cent Lille,IEMN,UMR 8520, F-59000 Lille, France
[2] Danube Private Univ, Fac Med & Dent, Lab Life Sci & Technol LiST, A-3500 Krems, Austria
关键词
Graphene; Field-effect transistor; Bioreceptors; Sensing; DNA;
D O I
10.1007/s00216-023-04760-1
中图分类号
Q5 [生物化学];
学科分类号
071010 ; 081704 ;
摘要
Two-dimensional (2D) materials hold great promise for future applications, notably their use as biosensing channels in the field-effect transistor (FET) configuration. On the road to implementing one of the most widely used 2D materials, graphene, in FETs for biosensing, key issues such as operation conditions, sensitivity, selectivity, reportability, and economic viability have to be considered and addressed correctly. As the detection of bioreceptor-analyte binding events using a graphene-based FET (gFET) biosensor transducer is due to either graphene doping and/or electrostatic gating effects with resulting modulation of the electrical transistor characteristics, the gFET configuration as well as the surface ligands to be used have an important influence on the sensor performance. While the use of back-gating still grabs attention among the sensor community, top-gated and liquid-gated versions have started to dominate this area. The latest efforts on gFET designs for the sensing of nucleic acids, proteins and virus particles in different biofluids are presented herewith, highlighting the strategies presently engaged around gFET design and choosing the right bioreceptor for relevant biomarkers.
引用
收藏
页码:2137 / 2150
页数:14
相关论文
共 50 条
  • [31] Simulation of graphene nanoribbon field-effect transistors
    Fiori, Gianluca
    Iannaccone, Giuseppe
    IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) : 760 - 762
  • [32] Supramolecular Chemistry on Graphene Field-Effect Transistors
    Zhang, Xiaoyan
    Huisman, Everardus H.
    Gurram, Mallikarjuna
    Browne, Wesley R.
    van Wees, Bart J.
    Feringa, Ben L.
    SMALL, 2014, 10 (09) : 1735 - 1740
  • [33] The effect of traps on the performance of graphene field-effect transistors
    Zhu, J.
    Jhaveri, R.
    Woo, J. C. S.
    APPLIED PHYSICS LETTERS, 2010, 96 (19)
  • [34] Modeling Techniques for Graphene Field-effect Transistors
    Lu, Haiyan
    Wu, Yun
    Huo, Shuai
    Xu, Yuehang
    Kong, Yuechan
    Chen, Tangshen
    2015 IEEE INTERNATIONAL CONFERENCE ON COMMUNICATION PROBLEM-SOLVING (ICCP), 2015, : 373 - 376
  • [35] Photoelectric Memory Effect in Graphene Heterostructure Field-Effect Transistors Based on Dual Dielectrics
    Choi, Hyun Ho
    Park, Jaesung
    Huh, Sung
    Lee, Seong Kyu
    Moon, Byungho
    Han, Sang Woo
    Hwang, Chanyong
    Cho, Kilwon
    ACS PHOTONICS, 2018, 5 (02): : 329 - 336
  • [36] Graphene Field-Effect Transistors With High Extrinsic fT and fmax
    Bonmann, Marlene
    Asad, Muhammad
    Yang, Xinxin
    Generalov, Andrey
    Vorobiev, Andrei
    Banszerus, Luca
    Stampfer, Christoph
    Otto, Martin
    Neumaier, Daniel
    Stake, Jan
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (01) : 131 - 134
  • [37] Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties
    Duyoung Choi
    Cihan Kuru
    Youngjin Kim
    Gunwoo Kim
    Taekyoung Kim
    Renkun Chen
    Sungho Jin
    Nanoscale Research Letters, 2015, 10
  • [38] Origins of Leakage Currents on Electrolyte-Gated Graphene Field-Effect Transistors
    Svetlova, Anastasia
    Kireev, Dmitry
    Beltramo, Guillermo
    Mayer, Dirk
    Offenhaeusser, Andreas
    ACS APPLIED ELECTRONIC MATERIALS, 2021, 3 (12) : 5355 - 5364
  • [39] Uniformly Nanopatterned Graphene Field-Effect Transistors with Enhanced Properties
    Choi, Duyoung
    Kuru, Cihan
    Kim, Youngjin
    Kim, Gunwoo
    Kim, Taekyoung
    Chen, Renkun
    Jin, Sungho
    NANOSCALE RESEARCH LETTERS, 2015, 10
  • [40] Monitoring the hemostasis process through the electrical characteristics of a graphene-based field-effect transistor
    Schuck, Ariadna
    Kim, Hyo Eun
    Jung, Kyung-Mo
    Hasenkamp, Willyan
    Kim, Yong-Sang
    BIOSENSORS & BIOELECTRONICS, 2020, 157