Substrate Strain Engineering of Single-Atomic Sn-N4 Sites Embedded in Various Carbon Matrixes for Bifunctional Oxygen Electrocatalysis

被引:14
|
作者
Hu, Hao [1 ]
Zhang, Peng [3 ]
Xiao, Bei-Bei [2 ]
Mi, Jian-Li [1 ]
机构
[1] Jiangsu Univ, Inst Adv Mat, Sch Mat Sci & Engn, Zhenjiang 212013, Peoples R China
[2] Jiangsu Univ Sci & Technol, Sch Energy & Power Engn, Zhenjiang 212003, Peoples R China
[3] Guangzhou Univ, Inst Environm Res Greater Bay, Key Lab Water Qual & Conservat Pearl River Delta, Minist Educ, Guangzhou 510006, Peoples R China
关键词
s; p-bands first-principles; single-atom catalysts; Sn-N-4 embedded carbon matrixes; bifunctional oxygen electrocatalysis; substrate strain engineering; DOPED GRAPHENE; REDUCTION REACTION; SCALING RELATIONS; CATALYSTS; NITROGEN; DESIGN; NANOPARTICLES; PERFORMANCE; ORR; ZN;
D O I
10.1021/acsami.3c02232
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
It is still a great challenge to design and synthesize high-efficiency and low-cost single-atom catalysts (SACs) as promising bifunctional electrocatalysts for the oxygen reduction reaction (ORR) and the oxygen evolution reaction (OER). Herein, theoretical insights into Sn-N4 embedded carbon nanotubes, graphene quantum dots, and graphene nanosheets (denoted as Sn-N4-CNTs, Sn-N4-GQDs, and Sn-N4-Gra, respectively) for the ORR/OER are systematically provided. These results show that the protruding Sn atom creates a Sn-N4 pyramid and induces varied strain transfer between Sn-N4 and different carbon substrates prior to adsorption of O intermediates, resulting in the opposite response of the adsorption strengths of O intermediates to the substrate curvature of Sn-N4-CNTs and Sn-N4-GQDs. The torsional strain induced by OH* and OOH* on the Sn atom of Sn-N4-CNTs breaks the scaling relations between the adsorption strengths of O intermediates. Consequently, Sn-N4-CNTs with suitable curvature achieve outstanding ORR performance with very low overpotentials (0.28 V). Furthermore, the increase of curvature boosts the OER activity of Sn-N4-CNTs. For Sn-N4-GQDs, high curvature contributes to promoted OER activity but reduced ORR activity. The electronic interactions reveal the electron transfer from the s/p-bands of Sn to the half-filled beta states of the frontier orbitals of O intermediates.
引用
收藏
页码:23170 / 23184
页数:15
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