A detailed computational study to investigate the influence of metals (Bi, Sn, Tl) substitution on phase transition, electronic band structure and their implications on optical, elastic, anisotropic and mechanical properties of PbHfO3

被引:10
作者
Nadeem, Javeria [1 ]
Kiran, Zubia [1 ]
Zeba, I. [2 ]
Gulzar, Fakiha [3 ]
Awais, M. [1 ]
Gillani, S. S. A. [1 ]
机构
[1] Govt Coll Univ Lahore, Dept Phys, Lahore 54000, Pakistan
[2] Lahore Coll Woman Univ Lahore, Dept Phys, Lahore 54000, Pakistan
[3] Univ Engn & Technol, Dept Phys, Lahore 54000, Pakistan
关键词
Phase transformation; Semiconductor-metal transition; Applicable in UV region; Best choice for photovoltaic and photoelectric appliances; Mechanically stable structure; GENERALIZED GRADIENT APPROXIMATION; DENSITY-FUNCTIONAL THEORY; PEROVSKITE; 1ST-PRINCIPLES; SRTIO3; PBZRO3; DEPENDENCE; CRYSTALS;
D O I
10.1007/s11082-022-04305-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
By using first-principles calculations in line with density functional theory, the structural, electronic, optical, elastic and mechanical properties of pure and substituted PbHfO3 have been investigated. Here the substituated elements are Bi, Sn and Tl. To express the effect of substitution, all computations are determined by a generalized gradient approximation and an ultra-soft pseudopotential. In the current research, Bi, Sn, and Tl are substituted at the Pb-site which is preferable to the Hf-site due to the stability of cubic perovskites. According to the structural properties, cubic to pseudo-cubic transition is obvious. Moreover, the decline in band gap is noticed, when specific concentration of impurities (Bi, Sn) atoms are substituated. However, substitution of Tl increases the gap between conduction/valence bands. It is not just the change in band gap that increases or decreases, the nature is also shifted from indirect to direct. Moreover, this behaviour is explained by the different density of states. Since then, a significant alteration in band gap is mainly due to the p-states. As a result, our material is a favourable choice for optoelectronic devices. The changes in electronic characteristics also influence the optical properties including the complex dielectric functions, absorption, reflectivity, loss function, and refractive index. We also explored the elastic constants (C-ij), stability criteria, and mechanical attributes like Bulk modulus (B), Young's modulus (Y), shear modulus (G), Poisson's ratio (upsilon) and anisotropic factor (A). Furthermore, we came to the conclusion that our material is elastically stable, ductile and stiff.
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页数:22
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