Millimeter-Wave GaAs Ultra-Wideband Medium Power Amplifier and Broadband High-Power Power Amplifier for 5G/6G Applications

被引：4
|
作者：
Fu, Zi-Hao [1 ,2 ]
Li, Ming-Xuan [3 ,4 ]
Ma, Tzyh-Ghuang [3 ]
Wu, Chan-Shin [5 ]
Lin, Kun-You [1 ,2 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Commun Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[3] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 10607, Taiwan
[4] ASUSTek Comp Inc, Taipei 11259, Taiwan
[5] Ultraband Technol Inc, Taipei 11158, Taiwan
来源：
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS | 2024年 / 14卷 / 01期
关键词：
Power amplifier; ultra-wideband; broadband; GaAs pHEMT; 5G; 6G; EFFICIENCY;
D O I：
10.1109/JETCAS.2024.3356010
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents an ultra-wideband (UWB)medium power amplifier (MPA) and a broadband high-power power amplifier (HPA) operating at the 5G/6G frequency bands. By using 0.15 mu m GaAs pseudomorphic high electron mobility transistor (pHEMT) technology process, the proposed UWB MPA delivers an average small-signal gain of 16.5 dB, a saturation output power (P-sat) of 24 dBm, and a peak power-added efficiency (PAE) over 24% from 24 to 38 GHz with a chip area of 2x1 mm(2). The broadband HPA demonstrates a 17-dB average small-signal gain, 29-dBm P-sat, and a PAE over 28%from 24 to 32 GHz with a 2.4 x 1.1 mm(2) chip size. The measurement results have demonstrated the great potential of the proposed PA for 5G/6G millimeter-wave applications
引用
收藏
页码：111 / 121
页数：11
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