Atomic Layer Deposition of La2O3 Film with Precursor La(thd)3-DMEA

被引：6

作者：

Zhao, Wenyong ^{[1
]}

Jiang, Jie ^{[1
]}

Luo, Yawen ^{[1
]}

Li, Jiahao ^{[1
]}

Ding, Yuqiang ^{[1
]}

机构：

[1] Jiangnan Univ, Int Joint Res Ctr Photorespons Mol & Mat, Sch Chem & Mat Engn, Wuxi 214122, Peoples R China

来源：

COATINGS | 2023年 / 13卷 / 05期

关键词：

novel lanthanum precursor; mixed ligands; ALD; La2O3; film; CHEMICAL-VAPOR-DEPOSITION; ELECTRICAL-PROPERTIES; GROWTH; COMPLEXES; OXIDES; MOCVD;

D O I：

10.3390/coatings13050870

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, a new precursor La(thd)(3)-DMEA (thd = 2,2,6,6-tetramethyl-3,5-heptanedione, DMEA = N,N'-dimethylethylenediamine) was synthesized and characterized with H-1-NMR and X-ray single crystal diffraction. The thermal properties of La(thd)3-DMEA were checked by thermogravimetric analysis (TGA), which confirmed that the volatility and suitability of La(thd)(3)-DMEA are suitable for atomic layer deposition (ALD). We studied the atomic layer deposition of La2O3 films on a SiO2 surface with La(thd)(3)-DMEA and O-3 as precursors. Self-limiting deposition behaviors were found for the prepared films. The purity and surface morphology of the as-grown La2O3 films, which possessed a constant growth rate of similar to 0.4 angstrom/cycle at 250-280 degrees C, were confirmed by XPS, SEM, and AFM. The results show that La(thd)(3)-DMEA is a suitable precursor for the atomic layer deposition of La2O3 film.

引用

页数：13

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