Crucible-Free Growth of Bulk b-Ga2O3 Single-Crystal Scintillator under Oxidizing Atmosphere

& beta;-Ga2O3 is a well-known semiconductor material for power devices and other applications. Recently, & beta;-Ga2O3 has also been reported as a scintillator material with a light yield of approximately 8400 ph./MeV, scintillation decay time of <1 & mu;s, and density of 6.44 g/cm(3). In this study, 45 cm diameter & beta;-Ga2O3 single crystals were prepared via oxide crystal growth using the cold crucible (OCCC) method under various oxygen partial pressures. In the OCCC method, as in the cold crucible method, a high frequency is applied directly to the oxide materials, which are heated and melted, and the melt is held by the outermost solid material itself that is cooled by water using a copper hearth. In the OCCC method, crystal growth is performed while rotating the seed crystal, as in the Czochralski method, to increase the crystal diameter. The optical properties and radiation responses of the crystals grown under various oxygen partial pressures were evaluated.