Molybdenum precursor delivery approaches in atomic layer deposition of α-MoO3

被引:3
|
作者
Lorenzo, Daniela [1 ]
Tobaldi, David Maria [1 ]
Tasco, Vittorianna [1 ]
Esposito, Marco [1 ]
Passaseo, Adriana [1 ]
Cuscuna, Massimo [1 ]
机构
[1] CNR NANOTEC Inst Nanotechnol, Via Monteroni, I-73100 Lecce, Italy
关键词
OXIDE THIN-FILMS; OPTICAL-PROPERTIES; REFRACTIVE-INDEX; SILICON; MOOX; GAP;
D O I
10.1039/d2dt03702e
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
In this research work, we present a study on time-sequenced plasma-enhanced atomic layer deposition (PE-ALD) processes towards the achievement of high-quality alpha-MoO3 thin films which are suitable for exfoliation. In particular, a conventional precursor injection method along with a boosted precursor delivery approach are discussed and analysed. In the latter, the proposed gas supply mechanism ensures a large number of deposited Mo atoms per unit of time, which, along with a proper thermal energy, leads to high-quality and oriented orthorhombic alpha-MoO3 films. The proposed boosted approach is also compared with post growth annealing steps, resulting in more effective achievement of a highly oriented orthorhombic alpha-MoO3 phase and less time consumption.
引用
收藏
页码:902 / 908
页数:8
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