High carrier mobility and broad spectrum GaSe/SnSe van der Waals heterostructure optoelectronic devices: First-principles study

被引：0

作者：

Wu, Ziqiao ^{[1
]}

Peng, Junhao ^{[1
]}

Huang, Hongfu ^{[1
]}

Zhang, Runqing ^{[1
]}

Xue, Jiancai ^{[1
]}

Li, Yongtao ^{[2
]}

Huang, Le ^{[3
,4
]}

Dong, Huafeng ^{[1
,4
]}

Wu, Fugen ^{[3
,4
]}

机构：

[1] Guangdong Univ Technol, Sch Phys & Optoelect Engn, Guangzhou 510006, Peoples R China

[2] DongGuan Inst GuangDong Inst Metrol, Dongguan 523000, Peoples R China

[3] Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Peoples R China

[4] Guangdong Univ Technol, Guangdong Prov Key Lab Informat Photon Technol, Guangzhou 510006, Peoples R China

来源：

COMPUTATIONAL MATERIALS SCIENCE | 2023年 / 230卷

基金：

中国国家自然科学基金;

关键词：

High mobility; Tunable bandgap; GaSe/SnSe heterostructure; Optical properties; Optoelectronic devices; TOTAL-ENERGY CALCULATIONS; OPTICAL-PROPERTIES; ELECTRONIC-PROPERTIES;

D O I：

10.1016/j.commatsci.2023.112507

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaSe is widely used in optoelectronics, and its nanosheets exhibit excellent on-off current ratios and photo-responsivity. However, its large band gap limits visible light absorption. Here, through constructing GaSe/SnSe heterojunction, we found the hole and electron mobility can reach 5916 and 483.53 cm2V-1s- 1, 846 and 1.4 times higher than mono-SnSe, respectively, due to it forming type-II band alignment reducing the recombination. In addition, the absorption spectrum can be broadened to the near-infrared spectrum (the band gap can be decreased to 0) through a biaxial strain or electrical field. This work provides a method to highly improve the efficiency and application scope of GaSe optoelectronic devices.

引用

页数：7

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