Simulation test technique for nuclear and space radiation effects

被引:3
作者
Chen, Wei [1 ,2 ]
Luo, Yin-hong [1 ,2 ]
Ma, Wu-ying [1 ,2 ]
Wang, Chen-hui [1 ,2 ]
Ding, Li-li [1 ,2 ]
Wang, Zujun [1 ,2 ]
Liu, Yan [1 ]
Mei, Bo [3 ]
Yao, Chong-bin [4 ]
Zeng, Chao [5 ]
Guo, Xiao-qiang [1 ,2 ]
Wang, Zhong-ming [1 ,2 ]
Wu, Wei [1 ,2 ]
机构
[1] Natl Key Lab Intense Pulsed Radiat Simulat & Effec, Xian 710024, Peoples R China
[2] Northwest Inst Nucl Technol, Xian 710024, Peoples R China
[3] China Acad Space Technol, Beijing 100029, Peoples R China
[4] Shanghai Aerosp Elect Technol Inst, Shanghai 201108, Peoples R China
[5] China Acad Engn Phys, Inst Elect Engn, Mianyang 621999, Peoples R China
关键词
nuclear radiation effects; space radiation effects; simulation test technique; equipments for radiation environment simulation; SINGLE EVENT UPSETS; HARDNESS ASSURANCE; PROTON; NEUTRON; DEVICES; DAMAGE; SEMICONDUCTOR; IRRADIATION; HYDROGEN; IMPACT;
D O I
10.1360/SSPMA-2022-0495
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
Many types of radiation particles are found in natural and artificial radiation environments; for instance, protons, electrons, heavy ions and neutrons, gamma rays, and X-rays. These radiation particles may induce transient ionizing dose effects, single event effects, displacement damage, and total ionizing dose effects in electronic devices, resulting in performance degradation, function abnormality, malfunction, and even failure in systems containing these devices. For example, 45% of the observed failures were due to radiation damage in artificial satellites working in space radiation environments. Thus, radiation damage plays a key role in restricting the long-term stability and reliability of electronic devices and the corresponding systems. Simulation test techniques for nuclear and space radiation effects are important foundations of radiation-hardness assurance studies, which can be useful for studying the basic mechanisms of radiation effects and estimating the effectiveness of hardness assurance methods, and indispensable for improving the reliability of electronics and the corresponding systems. In this study, four topics are presented, covering simulation test techniques for transient ionizing dose effects, single event effects, displacement damage, and total ionizing dose effects. For each topic, first, the status of radiation effect studies and experimental equipment suitability for performing radiation effect tests at home and abroad were reviewed. Second, the future development trends, along with the rapid progress in the field of microelectronics, were summarized based on information reported in references, and scientific and technical problems that should be heeded were raised and analyzed. This study can provide a reference for guiding the directions of radiation-hardness assurance.
引用
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页数:18
相关论文
共 83 条
  • [1] Adell P C, 2007, P RAD EFF COMP SYST
  • [2] Transient ionizing radiation effects in devices and circuits
    Alexander, DR
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2003, 50 (03) : 565 - 582
  • [3] [Anonymous], 2007, Annual Book of American Society for Testing and Materials (ASTM) Standards
  • [4] Tilt series STEM simulation of a 25 x 25 x 25 nm semiconductor with characteristic X-ray emission
    Aveyard, R.
    Rieger, B.
    [J]. ULTRAMICROSCOPY, 2016, 171 : 96 - 103
  • [5] X-ray radiation source for total dose radiation studies
    Bisello, D
    Candelori, A
    Kaminski, A
    Litovchenko, A
    Noah, E
    Stefanutti, L
    [J]. RADIATION PHYSICS AND CHEMISTRY, 2004, 71 (3-4) : 713 - 715
  • [6] Gamma-ray radiation effects in graphene-based transistors with h-BN nanometer film substrates
    Cazalas, E.
    Hogsed, M. R.
    Vangala, S.
    Snure, M. R.
    McClory, J. W.
    [J]. APPLIED PHYSICS LETTERS, 2019, 115 (22)
  • [7] Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electrons or X-ray irradiation
    Ceschia, M
    Paccagnella, A
    Sandrin, S
    Ghidini, G
    Wyss, J
    Lavale, M
    Flament, O
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2000, 47 (03) : 566 - 573
  • [8] Chen P., 2005, Radiation Effects on Semiconductor Devices and Integrated Circuits
  • [9] Chen W, 2016, SINGLE EVENT PHENOME
  • [10] Chen W, 2017, MODERN APPL PHYS, V8