Effect of Annealing Temperature on Minimum Domain Size of Ferroelectric Hafnia

被引：4

作者：

Yun, Seokjung ^{[1
]}

Kim, Hoon ^{[1
]}

Seo, Myungsoo ^{[2
]}

Kang, Min-Ho ^{[3
]}

Kim, Taeho ^{[2
]}

Cho, Seongwoo ^{[1
]}

Park, Min Hyuk ^{[4
]}

Jeon, Sanghun ^{[2
]}

Choi, Yang-Kyu ^{[2
]}

Hong, Seungbum ^{[1
,5
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Daejeon 34141, South Korea

[2] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea

[3] Korea Adv Inst Sci & Technol, Natl Nano Fab Ctr, Daejeon 34141, South Korea

[4] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea

[5] KAIST Inst NanoCentury KINC, Daejeon 34141, South Korea

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2024年 / 6卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

ferroelectric hafnia; domain behavior; piezoresponseforce microscopy; rapid thermal annealing; multiscaleanalysis; grain size; domain size; THIN-FILMS; OXIDE; POLARIZATION; NANOSCALE;

D O I：

10.1021/acsaelm.3c01104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We optimized the annealing temperature of the Hf0.5Zr0.5O2/TiN thin-film heterostructure via a multiscale analysis of the remnant polarization, crystallographic phase, minimum ferroelectric domain size, and average grain size. The remnant polarization and minimum domain size were closely related to the relative orthorhombic and monoclinic phase contents. The minimum domain size and optimum remnant polarization and capacitance were obtained by thermal annealing of Hf0.5Zr0.5O2/TiN/Si at 500 and 600 C-degrees, respectively. The results suggest that the minimum domain size is more important than the sheer magnitude of the remnant polarization because of the retention and fatigue of switchable polarization in ferroelectric nanodevices. This study can contribute to the development of ultralow-power logic transistors and next-generation nonvolatile memory devices.

引用

页码：2134 / 2141

页数：8

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