Using the Spark Plasma Sintering System for Fabrication of Advanced Semiconductor Materials

被引:0
作者
Kaszyca, Kamil [1 ]
Chmielewski, Marcin [1 ]
Bucholc, Bartosz [1 ,2 ]
Blyskun, Piotr [3 ]
Nisar, Fatima [2 ]
Rojek, Jerzy [2 ]
Zybala, Rafal [1 ,3 ]
机构
[1] Inst Microelect & Photon, Lukasiewicz Res Network, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
[2] Polish Acad Sci, Inst Fundamental Technol Res, Pawinskiego 5B, PL-02106 Warsaw, Poland
[3] Warsaw Univ Technol, Fac Mat Sci & Engn, Woloska 141, Warsaw, Poland
关键词
spark plasma sintering; arc melting; semiconductor materials; half-Heusler; bismuth telluride; cobalt triantimonide; SHS; SPS; PHONON-SCATTERING; TEMPERATURE;
D O I
10.3390/ma17061422
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The interest in the Spark Plasma Sintering (SPS) technique has continuously increased over the last few years. This article shows the possibility of the development of an SPS device used for material processing and synthesis in both scientific and industrial applications and aims to present manufacturing methods and the versatility of an SPS device, presenting examples of processing Arc-Melted- (half-Heusler, cobalt triantimonide) and Self-propagating High-temperature Synthesis (SHS)-synthesized semiconductor (bismuth telluride) materials. The SPS system functionality development is presented, the purpose of which was to broaden the knowledge of the nature of SPS processes. This approach enabled the precise design of material sintering processes and also contributed to increasing the repeatability and accuracy of sintering conditions.
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页数:15
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