An Organic Optoelectronic Synapse with Multilevel Memory Enabled by Gate Modulation

被引:8
|
作者
Guo, Haotian [1 ,2 ]
Guo, Jing [1 ,2 ]
Wang, Yujing [3 ]
Wang, Hezhen [1 ,2 ]
Cheng, Simin [1 ,2 ]
Wang, Zehao [1 ,2 ]
Miao, Qian [3 ]
Xu, Xiaomin [1 ,2 ]
机构
[1] Tsinghua Univ, Inst Mat Res, Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
[2] Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst, Shenzhen Geim Graphene Ctr, Shenzhen 518055, Peoples R China
[3] Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong 999077, Peoples R China
基金
中国国家自然科学基金;
关键词
Organic field-effect transistor; artificial synapse; nonvolatile memory; volatile memory; imageperception and memory; CHARGE-TRANSPORT; SEMICONDUCTORS; MOBILITY;
D O I
10.1021/acsami.3c19624
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Artificial synaptic devices are emerging as contenders for next-generation computing systems due to their combined advantages of self-adaptive learning mechanisms, high parallel computation capabilities, adjustable memory level, and energy efficiency. Optoelectronic devices are particularly notable for their responsiveness to both voltage inputs and light exposure, making them attractive for dynamic modulation. However, engineering devices with reconfigurable synaptic plasticity and multilevel memory within a singular configuration present a fundamental challenge. Here, we have established an organic transistor-based synaptic device that exhibits both volatile and nonvolatile memory characteristics, modulated through gate voltage together with light stimuli. Our device demonstrates a range of synaptic behaviors, including both short/long-term plasticity (STP and LTP) as well as STP-LTP transitions. Further, as an encoding unit, it delivers exceptional read current levels, achieving a program/erase current ratio exceeding 10(5), with excellent repeatability. Additionally, a prototype 4 x 4 matrix demonstrates potential in practical neuromorphic systems, showing capabilities in the perception, processing, and memory retention of image inputs.
引用
收藏
页码:66948 / 66960
页数:13
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