Superconducting diode effect sign change in epitaxial Al-InAs Josephson junctions

被引:14
|
作者
Lotfizadeh, Neda [1 ]
Schiela, William F. [1 ]
Pekerten, Baris [2 ,3 ]
Yu, Peng [1 ]
Elfeky, Bassel Heiba [1 ]
Strickland, William M. [1 ]
Matos-Abiague, Alex [2 ]
Shabani, Javad [1 ]
机构
[1] NYU, Ctr Quantum Informat Phys, Dept Phys, New York, NY 10003 USA
[2] Wayne State Univ, Dept Phys & Astron, Detroit, MI 48202 USA
[3] Univ Buffalo State Univ New York, Dept Phys, Buffalo, NY USA
关键词
Diodes - Indium arsenide - Josephson junction devices - Magnetic fields - Topology;
D O I
10.1038/s42005-024-01618-5
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
There has recently been a surge of interest in studying the superconducting diode effect (SDE) partly due to the possibility of uncovering the intrinsic properties of a material system. A change of sign of the SDE at finite magnetic field has previously been attributed to different mechanisms. Here, we observe the SDE in epitaxial Al-InAs Josephson junctions with strong Rashba spin-orbit coupling (SOC). We show that this effect strongly depends on the orientation of the in-plane magnetic field. In the presence of a strong magnetic field, we observe a change of sign in the SDE. Simulation and measurement of supercurrent suggest that depending on the superconducting widths, W S, this sign change may not necessarily be related to 0-pi or topological transitions. We find that the strongest sign change in junctions with narrow W S is consistent with SOC-induced asymmetry of the critical current under magnetic-field inversion, while in wider W S, the sign reversal could be related to 0-pi transitions and topological superconductivity. The superconducting diode effect (SDE) might reveal a material's intrinsic properties. Here a change of sign of the SDE is observed at finite magnetic field in planar Josephson junctions on a hybrid superconductor-semiconductor material.
引用
收藏
页数:8
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