Room temperature slot-die coated perovskite layer modified with sulfonyl-γ-AApeptide for high performance perovskite solar devices

被引:20
作者
Abate, Seid Yimer [1 ]
Yang, Ziqi [2 ]
Jha, Surabhi [3 ]
Ma, Guorong [3 ]
Ouyang, Zhongliang [4 ]
Zhang, Haixin [5 ]
Muhammad, Shafi [1 ]
Pradhan, Nihar [1 ]
Gu, Xiaodan [3 ]
Patton, Derek [3 ]
Wang, Kun [5 ]
Li, Dawen [4 ]
Cai, Jianfeng [2 ]
Dai, Qilin [1 ]
机构
[1] Jackson State Univ, Dept Chem Phys & Atmospher Sci, Jackson, MS 39217 USA
[2] Univ S Florida, Dept Chem, 4202 E Fowler Ave, Tampa, FL 33620 USA
[3] Univ Southern Mississippi, Ctr Optoelect Mat & Devices, Sch Polymer Sci & Engn, Hattiesburg, MS 39406 USA
[4] Univ Alabama, Ctr Mat Informat Technol, Dept Elect & Comp Engn, Tuscaloosa, AL 35487 USA
[5] Mississippi State Univ, Dept Phys & Astron, Dept Chem, Mississippi State, MS 39762 USA
基金
美国国家科学基金会;
关键词
Slot-die coating; -AApeptide; Defects; Amino acid passivation; Chemical bath depositedc-TiO2; Perovskite powder; SURFACE PASSIVATION; CELLS; EFFICIENT; FILMS; STABILITY;
D O I
10.1016/j.cej.2022.141199
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Perovskite solar cells (PSCs) exhibited remarkable progress for small aperture area cells, however, the perfor-mance of its counterpart, large aperture area cells, lags due to non-uniform and defective perovskite layers. Here, we fabricate reproducible large area homogeneous perovskite films at room temperature and without controlling humidity (up to 40 % RH) with a slot die coater on a c-TiO2 layer deposited using a large area chemical bath. A new artificial peptide - sulfonyl-gamma-AApeptide (F-GLU-S) was employed to modify the slot-die coated perovskite surface, grain boundaries and electronic defects. The multi-functional F-GLU-S with carbonyl, carboxyl, sulfonyl, benzene, and chloro groups was capable of strongly interacting with the perovskite layer and repairing the uncoordinated Pb2+ ions and halide vacancies. As a result, both the electron and hole densities of defects were significantly suppressed; consequently, the non-radiative recombination was effectively suppressed for the modified device which can be explicitly seen in the device performance where both Voc and FF of the modified device improved considerably. Therefore, F-GLU-S modified slot-die coated MAPbI3 - based devices demon-strated outstanding performance of 21.44 % PCE with a Voc of 1.13 V, Jsc of 24.64 cmi 2, and FF 76.99 %. Moreover, F-GLU-S passivation impeded the infiltration of moisture and oxygen due to its hydrophobic nature and defect repair potential. As a result, the modified device retained above 92 % of its original PCE after 720 h in air (room temperature and 40-60 % RH).
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页数:10
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