Angle-resolved photoemission spectroscopic studies on two-dimensional materials

被引:0
|
作者
Qiu, XiaoDong [1 ]
Wang, KaiLi [1 ]
Chen, Peng [2 ]
Zhang, Yi [1 ]
机构
[1] Nanjing Univ, Sch Phys, Nanjing 210093, Peoples R China
[2] Shanghai Jiao Tong Univ, Sch Phys & Astron, Shanghai 200240, Peoples R China
关键词
angle-resolved photoemission spectroscopy; two-dimensional materials; electronic structures; HEXAGONAL BORON-NITRIDE; CHARGE-DENSITY-WAVE; MASSLESS DIRAC FERMIONS; TWISTED BILAYER GRAPHENE; ELECTRONIC-STRUCTURE; BLACK PHOSPHORUS; EPITAXIAL-GROWTH; BAND-GAP; FUNCTIONAL MATERIALS; BERRYS PHASE;
D O I
10.1360/SSPMA-2022-0305
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
The electronic structure of a material is the key factor to determine its electronic, magnetic, and optical properties. As an advanced technique to directly observe the electronic structure, angle-resolved photoemission spectroscopy (ARPES) has been widely used for studying the fundamental physical and chemical properties of a material. In recent years, enormous two-dimensional (2D) materials with outstanding performances have been continually discovered, promising for future applications in optoelectronic, electronic, and spintronic devices. In this review article, we briefly introduce the basic components and principles of an ARPES system, and review the frontier progress of the ARPES studies on the electronic structures and fundamental physical properties of 2D materials. The 2D materials reviewed in this article can be categorized in four parts: graphene, h-BN, single element 2D materials, transition metal dichalcogenides (TMDCs). Among them, the ARPES results on graphene are the most fruitful, and have stimulated the expanding researches on the other 2D materials. In present, the studies on 2D van der Waals heterostructures have attracted great attention. We also include some ARPES studies on 2D stacking heterostructures.
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页数:30
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共 311 条
  • [1] Properties of graphene: a theoretical perspective
    Abergel, D. S. L.
    Apalkov, V.
    Berashevich, J.
    Ziegler, K.
    Chakraborty, Tapash
    [J]. ADVANCES IN PHYSICS, 2010, 59 (04) : 261 - 482
  • [2] Recent progress on the smart membranes based on two-dimensional materials
    Ai, Xinyu
    Li, Yu-Hao
    Li, Yi-Wei
    Gao, Tiantian
    Zhou, Kai-Ge
    [J]. CHINESE CHEMICAL LETTERS, 2022, 33 (06) : 2832 - 2844
  • [3] Large, non-saturating magnetoresistance in WTe2
    Ali, Mazhar N.
    Xiong, Jun
    Flynn, Steven
    Tao, Jing
    Gibson, Quinn D.
    Schoop, Leslie M.
    Liang, Tian
    Haldolaarachchige, Neel
    Hirschberger, Max
    Ong, N. P.
    Cava, R. J.
    [J]. NATURE, 2014, 514 (7521) : 205 - +
  • [4] Superconductivity and bandwidth-controlled Mott metal-insulator transition in 1T-TaS2-xSex
    Ang, R.
    Miyata, Y.
    Ieki, E.
    Nakayama, K.
    Sato, T.
    Liu, Y.
    Lu, W. J.
    Sun, Y. P.
    Takahashi, T.
    [J]. PHYSICAL REVIEW B, 2013, 88 (11):
  • [5] Real-Space Coexistence of the Melted Mott State and Superconductivity in Fe-Substituted 1T-TaS2
    Ang, R.
    Tanaka, Y.
    Ieki, E.
    Nakayama, K.
    Sato, T.
    Li, L. J.
    Lu, W. J.
    Sun, Y. P.
    Takahashi, T.
    [J]. PHYSICAL REVIEW LETTERS, 2012, 109 (17)
  • [6] Elements beyond graphene: Current state and perspectives of elemental monolayer deposition by bottom-up approach
    Antonatos, Nikolas
    Ghodrati, Hanieh
    Sofer, Zdenek
    [J]. APPLIED MATERIALS TODAY, 2020, 18
  • [7] Ares P, 2016, ADV MATER, V28, P6332, DOI [10.1002/adma.201602128, 10.1002/adma.201670209]
  • [8] Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus
    Baik, Seung Su
    Kim, Keun Su
    Yi, Yeonjin
    Choi, Hyoung Joon
    [J]. NANO LETTERS, 2015, 15 (12) : 7788 - 7793
  • [9] Stacking-Dependent Electronic Structure of Trilayer Graphene Resolved by Nanospot Angle-Resolved Photoemission Spectroscopy
    Bao, Changhua
    Yao, Wei
    Wang, Eryin
    Chen, Chaoyu
    Avila, Jose
    Asensio, Maria C.
    Zhou, Shuyun
    [J]. NANO LETTERS, 2017, 17 (03) : 1564 - 1568
  • [10] Elemental Topological Insulator with Tunable Fermi Level: Strained α-Sn on InSb(001)
    Barfuss, A.
    Dudy, L.
    Scholz, M. R.
    Roth, H.
    Hoepfner, P.
    Blumenstein, C.
    Landolt, G.
    Dil, J. H.
    Plumb, N. C.
    Radovic, M.
    Bostwick, A.
    Rotenberg, E.
    Fleszar, A.
    Bihlmayer, G.
    Wortmann, D.
    Li, G.
    Hanke, W.
    Claessen, R.
    Schaefer, J.
    [J]. PHYSICAL REVIEW LETTERS, 2013, 111 (15)