Broadband Short-Wave Infrared-Emitting MgGa2O4:Cr3+, Ni2+ Phosphor with Near-Unity Internal Quantum Efficiency and High Thermal Stability for Light-Emitting Diode Applications

Blue InGaN chip-pumped short-wave infrared (SWIR) emittershavearoused tremendous attention and shown emerging applications in diversefields such as healthcare, retail, and agriculture. However, discoveringblue light-emitting diode (LED)-pumped SWIR phosphors with a centralemission wavelength over 1000 nm remains a significant challenge.Herein, we demonstrate the efficient broadband SWIR luminescence ofNi(2+) by simultaneously incorporating Cr3+ andNi(2+) ions into the MgGa2O4 lattice,with Cr3+ as the sensitizer and Ni2+ as theemitter. Because of the strong blue light absorption of Cr3+ and high energy transfer efficiency to Ni2+, the obtainedMgGa(2)O(4):Cr3+, Ni2+ phosphorsshow intense SWIR luminescence with a peak wavelength at 1260 nm anda full width at half maximum (FWHM) of 222 nm under the excitationof blue light. The optimized SWIR phosphor presents an ultra-highSWIR photoluminescence quantum efficiency of 96.5% and outstandingluminescence thermal stability (67.9%@150 & DEG;C). A SWIR light sourcehas been fabricated through a combination of the prepared MgGa2O4:Cr3+, Ni2+ phosphor anda commercial 450 nm blue LED chip, delivering a maximum SWIR radiantpower of 14.9 mW at 150 mA input current. This work not only demonstratesthe feasibility of developing broadband high-power SWIR emitters usingconverter technology but also presents new insights into the importanceof SWIR technology.