Novel BixLa1-xMnyCo1-yO3 nanocrystalline perovskite based MIS Schottky UV photodetector device

This study introduces the fabrication of MIS junction for UV photodetection applications employing BixLa1-xMnyCo1-yO3 as an insulating layer (I-layer). The structure refinement of the synthesized perovskite powder is performed. The perovskite thin films' structural, topographical, and compositional features are inspected. The measured UV-visible optical absorption of thin films is discussed, where the energy gap and Urbach energy are estimated to be -3.09 eV and 93.4 meV, respectively. The MIS configuration was built employing p-silicon and Ag-electrode. The microelectronic parameters of the designed junction are calculated. The charge transport mechanism is interpreted in detail in the light of trap states. We evaluated the UV photodetection performance of the implemented device under different intestines. Some photodetection parameters have been determined, such as responsivity, detectivity, and external quantum efficiency, which yielded -8.01 mA/W, 1.23 x 109 cm.Hz0.5/W, and 4.32%, respectively. The engineered device showed a stable and fast response.