Integrated silicon electron source for high vacuum microelectromechanical system devices

被引：2

作者：

Krysztof, Michal ^{[1
]}

Miera, Pawel ^{[1
]}

Urbanski, Pawel ^{[1
]}

Grzebyk, Tomasz ^{[1
]}

Hausladen, Matthias ^{[2
]}

Schreiner, Rupert ^{[2
]}

机构：

[1] Wroclaw Univ Sci & Technol, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland

[2] Ostbayer TH, Seybothstr 2, Regensburg, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2024年 / 42卷 / 02期

关键词：

FIELD-EMISSION; FABRICATION; CATHODE; CNT;

D O I：

10.1116/6.0003385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The article presents the process of developing a silicon electron source designed for high-vacuum microelectromechanical system (HV MEMS) devices, i.e., MEMS electron microscope and MEMS x-ray source. Technological constraints and issues of such an electron source are explained. The transition from emitters made of carbon nanotubes to emitters made of pure silicon is described. Overall, the final electron source consists of a silicon tip emitter and a silicon gate electrode integrated on the same glass substrate. The source generates an electron beam without any carbon nanotube coverage. It generates a high and stable electron current and works after the final bonding process of an HV MEMS device.

引用

页数：8

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