High-Power and High-Speed Ge/Si Traveling-Wave Photodetector Optimized by Genetic Algorithm

被引：11

作者：

Fu, Zhilei ^{[1
]}

Yu, Hui ^{[1
]}

Wei, Zhujun ^{[1
]}

Xia, Penghui ^{[1
]}

Zhang, Qiang ^{[2
]}

Wang, Xiaofei ^{[1
]}

Huang, Qikai ^{[1
]}

Wang, Yuehai ^{[1
]}

Yang, Jianyi ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Informat Sci & Elect Engn, Hangzhou 310027, Peoples R China

[2] Zhejiang Lab, Hangzhou 311121, Peoples R China

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2023年 / 41卷 / 01期

基金：

国家重点研发计划;

关键词：

Microwave photonics; silicon photonics; high-power photodetectors; traveling-wave photodetectors; PHOTODIODE;

D O I：

10.1109/JLT.2022.3215622

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We experimentally demonstrate a 4-stage and an 8-stage Ge/Si distributed traveling-wave photodetectors (TWPDs) with high RF output powers and large bandwidths. The genetic algorithm is utilized to synergistically optimize multiple relevant design parameters, including the dimension of the coplanar waveguide electrode and the aperiodic arrangement of the PD array. After the genetic algorithm optimization, the 3dB bandwidth of the 4-stage TWPD is improved from 46 GHz to 54 GHz under the constraint that the bandwidth of the unterminated single PD element is 50 GHz. Meanwhile, the 3dB bandwidth of the 8-stage TWPD is improved from 33 GHz to 40 GHz. A good agreement between measured and calculated frequency responses is obtained. The measured maximum RF output powers of the aperiodic 4-stage and 8-stage TWPDs at 30 GHz are 2.5 dBm and 6.3 dBm, respectively. Furthermore, the effectiveness of our design methodology is verified by measurement results of devices fabricated at different silicon photonics foundries.

引用

页码：240 / 248

页数：9