Ultra-Low-Power Sub-1 V 29 ppm/°C Voltage Reference and Shared-Resistive Current Reference

被引：16
作者：
Shetty, Darshan [1 ]
Steffan, Christoph [1 ]
Holweg, Gerald [1 ]
Boesch, Wolfgang [2 ]
Grosinger, Jasmin [2 ]
机构：
[1] Infineon Technol Austria AG, A-8020 Graz, Austria
[2] Graz Univ Technol, Inst Microwave & Photon Engn, A-8010 Graz, Austria
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2023年 / 70卷 / 03期
关键词：
Voltage reference; curvature compensation; temperature compensation; high-precision; sub-1V; current reference; sub-threshold CMOS design; ultra-low-power; voltage-current reference; WAKE-UP RECEIVER; SUBTHRESHOLD VOLTAGE; CMOS; CIRCUITS; BANDGAP;
D O I：
10.1109/TCSI.2022.3225574
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a curvature-compensated sub-1V voltage reference (VR) and a shared-resistive nanoampere current reference (CR) in a 130nm CMOS process. The CR is used to generate a bipolar junction transistor complementary-to-absolute-temperature voltage, which is summed up with a proportional-to-absolute-temperature voltage generated using a summing network of PMOS gate-coupled pairs. The measured output voltage and current references from 10 chips (V-REF and I-REF) at room temperature are 469mV and 1.86nA, respectively. The measured average temperature coefficient of VREF and IREF are 29ppm/degrees C and 822ppm/degrees C over a temperature range from -40 degrees C to 120 degrees C. The minimum supply voltage of the voltage-current reference is 0.95V, and the total power consumption is 30nW.
引用
收藏
页码：1030 / 1042
页数：13
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