High-mobility spin-polarized two-dimensional electron gas at the interface of EuTiO3/SrTiO3 heterostructures

被引：2

作者：

Wang, Zhao-Cai ^{[1
]}

Zhang, Ying ^{[1
]}

Li, Zheng-Nan ^{[1
]}

Li, Shuang-Shuang ^{[1
]}

Ying, Jing-Shi ^{[1
]}

Yan, Wei ^{[1
]}

Chen, Lei ^{[2
]}

Zhang, Shu-Juan ^{[3
]}

Luo, Fu-Sheng ^{[4
]}

Zhao, Weiyao ^{[5
]}

Ye, Mao ^{[2
]}

Zheng, Ren-Kui ^{[1
,2
]}

机构：

[1] Nanchang Univ, Sch Phys & Mat Sci, Nanchang 330031, Peoples R China

[2] Guangzhou Univ, Sch Phys & Mat Sci, Guangzhou 510006, Peoples R China

[3] Jiangxi Sci & Technol Normal Univ, Sch Mat & Mech & Elect Engn, Nanchang 330038, Peoples R China

[4] Gannan Normal Univ, Sch Phys & Elect Informat, Ganzhou 341000, Peoples R China

[5] Monash Univ, Dept Mat Sci & Engn, Clayton, Vic 3800, Australia

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2024年 / 36卷 / 01期

基金：

中国国家自然科学基金;

关键词：

interface; spin polarized 2DEG; Shubnikov-de Haas oscillation; low-field hysteretic MR; SUPERCONDUCTIVITY;

D O I：

10.1088/1361-648X/acfc90

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Spin polarization of two-dimensional electron gas (2DEG) at the interface of EuTiO3/SrTiO3(STO) heterostructures has been theoretical predicted and experimentally observed via x-ray magnetic circular dichroism and polarized x-ray absorption spectroscopy, which, however, is lack of magnetotransport evidence. Here, we report the fabrication of high-quality EuTiO3/STO heterostructures by depositing antiferromagnetic insulating EuTiO3 thin films onto STO substrates. Shubnikov-de Haas oscillation, Hall, and magnetoresistance (MR) measurements show that the interface is not only highly conducting, with electron mobility up to 5.5x10(3) cm(2)V(-1)s(-1) at 1.8 K, but also shows low-field hysteretic MR effects. MR of similar to 9% is observed at 1.8 K and 20 Oe, which is one order of magnitude higher than those observed in other spin-polarized 2DEG oxide systems. Moreover, the heterostructures show ferromagnetic hysteresis loops. These results demonstrate that the high-mobility 2DEG is spin polarized, whose origin is attributed to the interfacial Ti3+-3d states due to oxygen deficiency and the exchange interactions between interfacial Eu spins and itinerant Ti-3d electrons.

引用

页数：8

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