Enhanced etching resolution of self-assembled PS-b-PMMA block copolymer films by ionic liquid additives

被引:3
作者
Hao, Hongbo [1 ,2 ]
Chen, Shuangjun [1 ,2 ]
Ren, Jiaxing [3 ]
Chen, Xuanxuan [3 ]
Nealey, Paul [3 ]
机构
[1] Nanjing Tech Univ, Coll Mat Sci & Engn, Nanjing 210009, Jiangsu, Peoples R China
[2] Jiangsu Collaborat Innovat Ctr Adv Inorgan Funct C, Nanjing 210009, Peoples R China
[3] Univ Chicago, Pritzker Sch Mol Engn, Chicago, IL 60637 USA
基金
中国国家自然科学基金;
关键词
block copolymer lithography; reactive ion etching; PS-b-PMMA; ionic liquid; line edge roughness (LER); POLYSTYRENE-BLOCK-POLY(METHYL METHACRYLATE); PHASE-BEHAVIOR; FABRICATION; BLENDS;
D O I
10.1088/1361-6528/acb6df
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) is one of the most widely studied block copolymers for direct self-assembly because of its excellent compatibility with traditional processes. However, pattern transfer of PS-b-PMMA block copolymers (BCPs) remains a great challenge for its applications due to the insufficient etching resolution. In this study, the effect of ionic liquid 1-hexyl-3-methylimidazolium hexafluorophosphate (HMHF) additives on the line edge roughness (LER) performances of PS-b-PMMA self-assembled patterns was studied. Trace addition of HMHF kept the photolithography compatibility of PS-b-PMMA block copolymer films, but obviously increased their Flory-Huggins interaction parameter (chi) and enabled phase separation of disordered low molecular weight BCPs. LER value was effectively decreased by blending HMHF directly with PS-b-PMMA or from a supplying top layer of polyvinylpyrrolidone containing HMHF additives. This study shows an excellent strategy to improve the deficiencies of existing block copolymers.
引用
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页数:11
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