An Automated System for Strain Engineering and Straintronics of 2D Materials

被引：19
作者：
Cakiroglu, Onur [1 ]
Island, Joshua O. [2 ]
Xie, Yong [1 ,3 ]
Frisenda, Riccardo [4 ]
Castellanos-Gomez, Andres [1 ]
机构：
[1] Inst Ciencia Mat Madrid ICMM CSIC, Mat Sci Factory, E-28049 Madrid, Spain
[2] Univ Nevada, Dept Phys & Astron, Las Vegas, NV 89154 USA
[3] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Peoples R China
[4] Sapienza Univ, Dept Phys, I-00185 Rome, Italy
来源：
ADVANCED MATERIALS TECHNOLOGIES | 2023年 / 8卷 / 01期
基金：
欧洲研究理事会;
关键词：
2D materials; photodetectors; piezoresistance; strain engineering; straintronics; strain tunable bandgap; three-points bending setup; PHOTOCURRENT GENERATION; ELASTIC PROPERTIES; MONOLAYER; PHOTOLUMINESCENCE; MECHANISMS; RAMAN; GAIN;
D O I：
10.1002/admt.202201091
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This work presents an automated three-point bending apparatus that can be used to study strain engineering and straintronics in 2D materials. This work benchmarks the system by reporting reproducible strain tuned micro-reflectance, Raman, and photoluminescence spectra for monolayer molybdenum disulfide (MoS2). These results are in good agreement with reported literature using conventional bending apparatus. This work further utilizes the system to automate strain investigations of straintronic devices by measuring the piezoresistive effect and the strain effect on photoresponse in an MoS2 electrical device. The details of the construction of the straightforward system are given and it is anticipated that it can be easily implemented for study of strain engineering and straintronics in a wide variety of 2D material systems.
引用
收藏
页数：7
相关论文
共 48 条
[1]   A review on mechanics and mechanical properties of 2D materials-Graphene and beyond [J].
Akinwande, Deji ;
Brennan, Christopher J. ;
Bunch, J. Scott ;
Egberts, Philip ;
Felts, Jonathan R. ;
Gao, Huajian ;
Huang, Rui ;
Kim, Joon-Seok ;
Li, Teng ;
Li, Yao ;
Liechti, Kenneth M. ;
Lu, Nanshu ;
Park, Harold S. ;
Reed, Evan J. ;
Wang, Peng ;
Yakobson, Boris I. ;
Zhang, Teng ;
Zhang, Yong-Wei ;
Zhou, Yao ;
Zhu, Yong .
EXTREME MECHANICS LETTERS, 2017, 13 :42-77
[2]   Stretching and Breaking of Ultrathin MoS2 [J].
Bertolazzi, Simone ;
Brivio, Jacopo ;
Kis, Andras .
ACS NANO, 2011, 5 (12) :9703-9709
[3]   Strain-tuning of the electronic, optical, and vibrational properties of two-dimensional crystals [J].
Blundo, E. ;
Cappelluti, E. ;
Felici, M. ;
Pettinari, G. ;
Polimeni, A. .
APPLIED PHYSICS REVIEWS, 2021, 8 (02)
[4]   Photocurrent generation with two-dimensional van der Waals semiconductors [J].
Buscema, Michele ;
Island, Joshua O. ;
Groenendijk, Dirk J. ;
Blanter, Sofya I. ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
CHEMICAL SOCIETY REVIEWS, 2015, 44 (11) :3691-3718
[5]   The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2 [J].
Buscema, Michele ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Castellanos-Gomez, Andres .
NANO RESEARCH, 2014, 7 (04) :561-571
[6]   Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2 [J].
Carrascoso, Felix ;
Li, Hao ;
Frisenda, Riccardo ;
Castellanos-Gomez, Andres .
NANO RESEARCH, 2021, 14 (06) :1698-1703
[7]   Isolation and characterization of few-layer black phosphorus [J].
Castellanos-Gomez, Andres ;
Vicarelli, Leonardo ;
Prada, Elsa ;
Island, Joshua O. ;
Narasimha-Acharya, K. L. ;
Blanter, Sofya I. ;
Groenendijk, Dirk J. ;
Buscema, Michele ;
Steele, Gary A. ;
Alvarez, J. V. ;
Zandbergen, Henny W. ;
Palacios, J. J. ;
van der Zant, Herre S. J. .
2D MATERIALS, 2014, 1 (02)
[8]   Mechanics of freely-suspended ultrathin layered materials [J].
Castellanos-Gomez, Andres ;
Singh, Vibhor ;
van der Zant, Herre S. J. ;
Steele, Gary A. .
ANNALEN DER PHYSIK, 2015, 527 (1-2) :27-44
[9]   Elastic Properties of Freely Suspended MoS2 Nanosheets [J].
Castellanos-Gomez, Andres ;
Poot, Menno ;
Steele, Gary A. ;
van der Zant, Herre S. J. ;
Agrait, Nicolas ;
Rubio-Bollinger, Gabino .
ADVANCED MATERIALS, 2012, 24 (06) :772-775
[10]   Bandgap engineering of two-dimensional semiconductor materials [J].
Chaves, A. ;
Azadani, J. G. ;
Alsalman, Hussain ;
da Costa, D. R. ;
Frisenda, R. ;
Chaves, A. J. ;
Song, Seung Hyun ;
Kim, Y. D. ;
He, Daowei ;
Zhou, Jiadong ;
Castellanos-Gomez, A. ;
Peeters, F. M. ;
Liu, Zheng ;
Hinkle, C. L. ;
Oh, Sang-Hyun ;
Ye, Peide D. ;
Koester, Steven J. ;
Lee, Young Hee ;
Avouris, Ph. ;
Wang, Xinran ;
Low, Tony .
NPJ 2D MATERIALS AND APPLICATIONS, 2020, 4 (01)
12345