An efficient in-memory carry select adder realization using resistive switching crossbar array with Ti-doped VO2-based selector device

被引:6
作者
Dilna, U. [1 ]
Prasad, S. N. [2 ]
机构
[1] REVA Univ, Sch Elect & Commun Engn, Bangalore 560064, Karnataka, India
[2] Manipal Acad Higher Educ MAHE, Manipal Inst Technol Bengaluru, Dept Elect & Elect Engn, Manipal 576104, Karnataka, India
关键词
In-memory computation; Carry select adder; Selector device; Carry Generation and Selection (CGS) scheme; VANADIUM DIOXIDE; DIODE;
D O I
10.1016/j.mssp.2023.108008
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In-memory computing (IMC) can significantly increase speed efficiency by significantly reducing the time and energy consumption of memory access. Therefore, efficient storage actions are essential for applications that require a lot of data. This article presents a simple Carry Generation and Selection (CGS) scheme-based Carry SeLect Adder (CGS-CSLA) using the realization of the Boolean majority three operation with an overturned input in crossbar Resistive memory. However, the usage of crossbar array structure is constrained by the sneak current path issue in real applications. The proposed 1S1R crossbar array uses a Ti-doped VO2 selector device to address this problem. Also, the proposed CSLA comprises a multiple-step architecture that comprises numerous single-step elements to improve the speed of operation using parallel operations. The proposed CGS-CSLA removes the superfluous operations of the traditional CSLA by simplifying the logic. The suggested adder lowered the delay to 8 +3log2(n) and used less energy by minimizing sneak currents.
引用
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页数:12
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