Applications and potentials of machine learning in optoelectronic materials research: An overview and perspectives

被引:2
|
作者
Zhang, Cheng-Zhou [1 ]
Fu, Xiao-Qian [1 ,2 ]
机构
[1] Univ Jinan, Sch Informat Sci & Engn, Jinan 250022, Peoples R China
[2] Univ Jinan, Shandong Prov Key Lab Network based Intelligent Co, Jinan 250022, Peoples R China
基金
中国国家自然科学基金;
关键词
optoelectronic materials; devices; machine learning; prior knowledge; 61.72.-y; 07.05.Mh; 85.60.-q; 71.20.Nr; MATERIALS DISCOVERY; MOLECULAR-DYNAMICS; CRYSTAL-STRUCTURES; DATA SCIENCE; DESIGN; SEMICONDUCTORS; PREDICTION; CLASSIFICATION; OPTIMIZATION; TRANSPARENT;
D O I
10.1088/1674-1056/ad01a4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Optoelectronic materials are essential for today's scientific and technological development, and machine learning provides new ideas and tools for their research. In this paper, we first summarize the development history of optoelectronic materials and how materials informatics drives the innovation and progress of optoelectronic materials and devices. Then, we introduce the development of machine learning and its general process in optoelectronic materials and describe the specific implementation methods. We focus on the cases of machine learning in several application scenarios of optoelectronic materials and devices, including the methods related to crystal structure, properties (defects, electronic structure) research, materials and devices optimization, material characterization, and process optimization. In summarizing the algorithms and feature representations used in different studies, it is noted that prior knowledge can improve optoelectronic materials design, research, and decision-making processes. Finally, the prospect of machine learning applications in optoelectronic materials is discussed, along with current challenges and future directions. This paper comprehensively describes the application value of machine learning in optoelectronic materials research and aims to provide reference and guidance for the continuous development of this field.
引用
收藏
页数:21
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