High-Density LED Array Based on Epitaxial Slice Damage-Free Process and Its Single-Contact Operation Mode With Low Crosstalk

被引:5
|
作者
Wang, Kun [1 ]
Li, Wenhao [1 ]
Chen, Rong [2 ]
Zhang, Yongai [1 ,2 ]
Zhou, Xiongtu [1 ,2 ]
Ye, Yun [1 ,2 ]
Guo, Tailiang [1 ,2 ]
Wu, Chaoxing [1 ,2 ]
机构
[1] Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
[2] Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
关键词
High density; light-emitting diodes; crosstalk suppression; alternating current; single-contact mode;
D O I
10.1109/LED.2023.3318221
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-density light-emitting diodes (LEDs) show great potential for next-generation micro-display technology due to their high resolution, long operational life, high brightness and high efficiency. However, conventional fabrication methods for high density LEDs suffer from issues such as growth difficulties, etch damage, and ion implantation damage. In this work, we propose an epitaxial slice damage-free process to fabricate an LED array with high density (2500 pixels per inch). To inhibit the potential electrical and optical crosstalk, the single-contact (SC) operation mode is employed. It is demonstrated that the SC-LEDs show frequency-selective luminescence characteristics. Moreover, crosstalk effect of the LEDs is significantly reduced compared to that operating in conventional DC mode. Finally, the mechanism of crosstalk suppression is revealed by finite element analysis. This work provides a promising approach for realizing high density LED array, offering valuable reference for further development in micro/nano-display technology.
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收藏
页码:1865 / 1868
页数:4
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