Interfacial Engineering of a PCBM/AZO Electron Transport Bilayer for Efficient and Stable Inverted Perovskite Solar Cells

The reduced hysteresis index and low-temperature processed fabrication of inverted p-i-n perovskite solar cells (PSC) have attracted substantial attraction for achieving higher photovoltaic performance through interfacial engineering. Despite having certain limitations, fullerene-based electron transport layers have been used frequently utilized in mixed halide inverted perovskite solar cells. The energy level mismatch between PCBM and metal electrode creates a hindrance in efficient electron extraction and thus a limiting factor in attaining higher device performances. In this work, we report an efficient interlayer of aluminum-doped zinc oxide (AZO) nanoparticles in-between PCBM and the metal electrode to suppress interfacial recombination. The PCBM/AZO electron transport bilayer can effectively mitigate the imperfections of the PCBM layer alone. The PCBM/AZO electron transport bilayer with an optimal concentration of 2% Al dopant exhibited greatly improved power conversion efficiency (PCE) of 18.63%, V-OC of 1.13 V, and FF of 73% with negligible hysteresis index of 0.04. Further, the optimal device exhibited remarkable stability by retaining 91% of the initial PCE after 200 hours confirming the suitable insertion of the AZO bilayer. The improved photovoltaic performance using PCBM/AZO bilayer can be attributed to higher electron transfer efficiency, suppressed interfacial recombination, and smooth surface morphology of AZO nanoparticles atop the PCBM layer.