Growth of undoped ZnO thin films by spray pyrolysis: effect of precursor concentration

被引:13
作者
Meryem, Lamri Zeggar [1 ,2 ]
Touidjen, Nour El Houda [2 ]
Aida, Mohammed Salah [3 ]
Aouabdia, Nabila [2 ]
Rouabah, Sawsen [2 ]
机构
[1] Ecole Normale Super, Dept Phys Chem, Constantine, Algeria
[2] Freres Mentouri Univ, Dept Elect, LEMEAMED Lab, Constantine, Algeria
[3] King Abdulaziz Univ, Fac Sci, Dept Phys, Jeddah, Saudi Arabia
来源
JOURNAL OF OPTICS-INDIA | 2023年 / 52卷 / 04期
关键词
ZnO; Thin films; Spray pyrolysis; Solar cell; DEPOSITION; SURFACE;
D O I
10.1007/s12596-022-01079-5
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Undoped zinc oxide (ZnO) thin films have been deposited by the low-cost spray pyrolysis technique. The effect of precursor concentration on film's structural and optoelectronic properties is investigated. A set of ZnO samples were prepared with different concentration solution varied from 0.1 to 0.25 M on heated glass substrates at 400 degrees C. The synthetized films structural, optical and electrical properties were studied by mean of X-ray diffraction (XRD), UV visible transmittance and dark conductivity measurements at ambient temperature. We found that the film thickness increases with the starting solution concentration. The XRD results reveal that the films have hexagonal wurtzite structure with preferential orientation of (002). The crystallite sizes increase, and the structural defects decrease with increasing molarity. The optical characterizations revealed that the films exhibit high optical transmittance (80-90%) in the visible range with large optical band gap varied from 3.2 to 3.31 eV. The dark conductivity is enhanced with the variation of Zn concentration due to the improvement in the structural quality of the films.
引用
收藏
页码:1782 / 1788
页数:7
相关论文
共 35 条
[1]   Physical properties of ZnO thin films deposited by spray pyrolysis technique [J].
Ashour, A. ;
Kaid, M. A. ;
El-Sayed, N. Z. ;
Ibrahim, A. A. .
APPLIED SURFACE SCIENCE, 2006, 252 (22) :7844-7848
[2]   Nanotextured Surface on Flexographic Printed ZnO Thin Films for Low-Cost Non-Faradaic Biosensors [J].
Assaifan, Abdulaziz K. ;
Lloyd, Jonathan S. ;
Samavat, Siamak ;
Deganello, Davide ;
Stanton, Richard J. ;
Teng, Kar Seng .
ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (49) :33802-33810
[3]   Effect of precursor concentration on structural, morphological and opto-electric properties of ZnO thin films prepared by spray pyrolysis [J].
Baneto, Mazabalo ;
Enesca, Alexandru ;
Lare, Yendoube ;
Jondo, Koffi ;
Napo, Kossi ;
Duta, Anca .
CERAMICS INTERNATIONAL, 2014, 40 (06) :8397-8404
[4]   A gel-state dye-sensitized hierarchically structured ZnO solar cell: Retention of power conversion efficiency and durability [J].
Bi, Shi-Qing ;
Zheng, Yan-Zhen ;
Ding, Hai-Yang ;
Tao, Xia ;
Chen, Jian-Feng .
ELECTROCHIMICA ACTA, 2013, 114 :700-705
[5]   High-pressure Raman spectroscopy study of wurtzite ZnO [J].
Decremps, F ;
Pellicer-Porres, J ;
Saitta, AM ;
Chervin, JC ;
Polian, A .
PHYSICAL REVIEW B, 2002, 65 (09) :921011-921014
[6]   Raman spectroscopy of (Mn, Co)-codoped ZnO films [J].
Du, C. L. ;
Gu, Z. B. ;
Lu, M. H. ;
Wang, J. ;
Zhang, S. T. ;
Zhao, J. ;
Cheng, G. X. ;
Heng, H. ;
Chen, Y. F. .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (12)
[7]   CO2 Sensing Behavior of Calcium-Doped ZnO Thin Film: A Study To Address the Cross-Sensitivity of CO2 in H2 and CO Environment [J].
Ghosh, Abhishek ;
Zhang, Chen ;
Zhang, Haifeng ;
Shi, Sheldon .
LANGMUIR, 2019, 35 (32) :10267-10275
[8]   Effect on the dielectric properties due to In-N co-doping in ZnO particles [J].
Kaur, Manpreet ;
Kumar, Vishesh ;
Kaur, Prabhsharan ;
Lal, Madan ;
Negi, Puneet ;
Sharma, Rakesh .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (07) :8991-9004
[9]   Properties of high sensitivity ZnO surface acoustic wave sensors on SiO2/(100) Si substrates [J].
Krishnamoorthy, Soumya ;
Iliadis, Agis A. .
SOLID-STATE ELECTRONICS, 2008, 52 (11) :1710-1716
[10]   Preparation and Characterization of Sol-Gel Dip Coated Al: ZnO (AZO) Thin Film for Opto-Electronic Application [J].
Kumar, K. Deva Arun ;
Valanarasu, S. ;
Rosario, S. Rex .
SEMICONDUCTORS, 2019, 53 (04) :447-451