Understanding the influence of Cu ions implantation towards highly efficient MAPbBr3 perovskite solar cells

被引:18
作者
Hussain, Saddam [1 ]
Khan, M. I. [1 ]
Ghafoor, Adnan [1 ]
Subhani, Waqas Siddique [1 ]
Shahid, Wajeehah [1 ]
Mahmoud, Z. [2 ]
Elqahtani, Zainab Mufarreh [3 ]
Ercan, Filiz [4 ,5 ]
Alwadai, Norah [3 ]
Iqbal, Munawar [6 ]
机构
[1] Univ Lahore, Dept Phys, Lahore 53700, Pakistan
[2] King Khalid Univ, Coll Sci, Dept Phys, POB 9004, Abha, Saudi Arabia
[3] Princess Nourah bint Abdulrahman Univ, Coll Sci, Dept Phys, POB 84428, Riyadh 11671, Saudi Arabia
[4] Imam Abdulrahman Bin Faisal Univ, Basic & Appl Sci Res Ctr, Nanomat Technol Unit, POB 1982, Dammam 31441, Saudi Arabia
[5] Imam Abdulrahman Bin Faisal Univ, Coll Sci, Dept Phys, POB 1982, City Dammam 31441, Saudi Arabia
[6] Univ Educ, Dept Chem, Div Sci & Technol, Lahore, Pakistan
关键词
Ion implantation; Cu ions; MAPbBr3; Perovskite solar cells; METAL-HALIDE PEROVSKITES; PERFORMANCE ENHANCEMENT; THIN-FILMS; BAND-GAP; BROMIDE;
D O I
10.1016/j.optmat.2023.113806
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
MAPbBr(3) films were deposited on FTO-glass substrates by the spin coating technique. These films were irradiated by Cu ions with a flounce rate of 2 x 10(14) ions/cm2, 4 x 10(14) ions/cm(2), and 6 x 10(14) ions/cm(2) respectively. MAPbBr(3) films exhibited a crystalline nature and a cubic structure, as verified by XRD. The MAPbBr3 film irradiated by 4 x 1014 ions/cm(2) Cu ions has a large grain size (33 nm) and a small Eg (2.11 eV). As a result, the trap-state densities within the perovskite bulk were suppressed at interfaces as well as in the bulk material for smooth and improved carrier transportation. The calculated valence and conduction band edges of MAPbBr(3) are '-5.60' and '-3.2', respectively. The film exposed to Cu ions has the CB edge pushed towards the lower value, making it a preferable solar cell material. The non-irradiated and irradiated films by Cu ions have higher carrier life times of 63 ns and 74 ns, respectively. The cell fabricated with ions/cm(2) Cu ions-MAPbBr3 film displayed a champion device with FF (0.84), J(sc) (9.34 mA-cm (2)), V-oc (1.098), and PCE (8.59%).
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页数:8
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