Silicon oxynitride nanofilms prepared by PLD with controlled Eu-local concentration for broadband white light emitters

We report the successful preparation and characterization of active silicon oxynitride thin films with controlled europium (Eu) doping by alternated pulsed laser deposition. The successful Eu doping with a nanostructured dopant distribution, as well as the stoichiometry of the oxynitride film, have been determined by ion beam analysis (RBS). The oxidation state of the incorporated Eu ions has been determined by in-depth x-ray photoelectron spectroscopy (XPS) and it is shown that the Eu ions are in the 2+ state, in contrast to the usual results found in oxide matrices for which the 3+ oxidation state prevails. The Eu-doped films show an intense broadband emission (FWHM >210 nm) associated to the optical transition 4f65d1 -> 8S7/2 of the Eu2+ ions within the amorphous matrix. As expected, the intensity of the emission band increases as the Eu concentration increases, and it is remarkable that the emission shifts towards longer wavelengths. In terms of the chromatic coordinates (CIE) this implies a color tuning from a bluish to orange that enables color tunable emission, and potential white like emission by combining layers with different Eu2+ ions concentration. Therefore, the developed oxynitride films with controlled Eu2+ ions concentration achieved by PLD are promising for the development of color -tailored LED's.