A Ti-Doped Chemical Vapor Deposition Diamond Device as Artificial Synapse for Neuromorphic Applications

被引:6
作者
Battistoni, Silvia [1 ]
Carcione, Rocco [1 ]
Tamburri, Emanuela [2 ,3 ]
Erokhin, Victor [1 ]
Terranova, Maria Letizia [2 ,3 ]
Iannotta, Salvatore [1 ]
机构
[1] Inst Mat Elect & Magnetism CNR IMEM, Consiglio Nazl Ric, Parco Area Sci 37A, I-43124 Parma, Italy
[2] Univ Roma Tor Vergata, Dip to Sci & Tecnol Chim, Via Ric Scientif, I-00133 Rome, Italy
[3] Univ Roma Tor Vergata, Ctr Ric Interdipartimentale Med Rigenerativa CIMER, Via Montpellier 1, I-00133 Rome, Italy
来源
ADVANCED MATERIALS TECHNOLOGIES | 2023年 / 8卷 / 09期
关键词
diamond; memristive device; resistance switching; synapse; CARBON; HYDROGEN; FILMS;
D O I
10.1002/admt.202201555
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The great demand of multifunctional portable electronic products in daily life and the need of a large integration of memories with logic devices and sensors, have increased the interest in the identification of suitable materials for neuromorphic computing applications. Major innovations in this direction have been achieved by exploring materials belonging to different fields of applications and taking advantage of already consolidated deposition methods. Despite the great interest in the field and the large use in complementary applications such as sensing electrodes, neural and cellular interfaces, the use of diamond-like materials in neuromorphic applications is still limited to a few examples. Here, the development of a synaptic element based on high-quality polycrystalline diamond layers containing Ti inclusions showing a marked and reproducible resistance switching behavior is reported. Realized by means of a hybrid chemical vapor deposition-powder flowing technique, this titanium doped diamond shows a 3D polycrystalline organization that is characterized by globular grains of a few microns. The coupling of Raman spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction analyses confirms the good quality of diamond phase and convincingly points out the inclusion of the titanium species within the diamond lattice.
引用
收藏
页数:9
相关论文
共 40 条
[21]   Neuromorphic device architectures with global connectivity through electrolyte gating [J].
Gkoupidenis, Paschalis ;
Koutsouras, Dimitrios A. ;
Malliaras, George G. .
NATURE COMMUNICATIONS, 2017, 8
[22]   Synaptic plasticity functions in an organic electrochemical transistor [J].
Gkoupidenis, Paschalis ;
Schaefer, Nathan ;
Strakosas, Xenofon ;
Fairfield, Jessamyn A. ;
Malliaras, George G. .
APPLIED PHYSICS LETTERS, 2015, 107 (26)
[23]   Spintronic Nanodevices for Bioinspired Computing [J].
Grollier, Julie ;
Querlioz, Damien ;
Stiles, Mark D. .
PROCEEDINGS OF THE IEEE, 2016, 104 (10) :2024-2039
[24]   Hysteresis loop in the current-voltage characteristic of Al/boron-doped polycrystalline diamond Schottky contact [J].
Guo, WH ;
Huang, JT ;
Hwang, J .
DIAMOND AND RELATED MATERIALS, 1997, 6 (01) :12-16
[25]   Morphology and structure of Ti-doped diamond films prepared by microwave plasma chemical vapor deposition [J].
Liu, Xuejie ;
Lu, Pengfei ;
Wang, Hongchao ;
Ren, Yuan ;
Tan, Xin ;
Sun, Shiyang ;
Jia, Huiling .
APPLIED SURFACE SCIENCE, 2018, 442 :529-536
[26]  
Mahé E, 2000, ELECTROCHIM ACTA, V46, P629
[27]   Optoelectronic synapses using vertically aligned graphene/diamond heterojunctions [J].
Mizuno, Y. ;
Ito, Y. ;
Ueda, K. .
CARBON, 2021, 182 :669-676
[28]  
Ohno T, 2011, NAT MATER, V10, P591, DOI [10.1038/nmat3054, 10.1038/NMAT3054]
[29]   Modeling Electrical Switching Behavior of Carbon Resistive Memory [J].
Ou, Qiao-Feng ;
Wang, Lei ;
Xiong, Bang-Shu .
IEEE ACCESS, 2020, 8 :8735-8742
[30]   Recent progress in resistive random access memories: Materials, switching mechanisms, and performance [J].
Pan, F. ;
Gao, S. ;
Chen, C. ;
Song, C. ;
Zeng, F. .
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2014, 83 :1-59