WSe2 Light-Emitting Device Coupled to an h-BN Waveguide

被引:16
作者
Khelifa, Ronja [1 ]
Shan, Shengyu [1 ]
Moilanen, Antti J. [1 ]
Taniguchi, Takashi [2 ]
Watanabe, Kenji [3 ]
Novotny, Lukas [1 ]
机构
[1] Swiss Fed Inst Technol, Photon Lab, CH-8093 Zurich, Switzerland
[2] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba 3050044, Japan
[3] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba 3050044, Japan
基金
瑞士国家科学基金会;
关键词
waveguide-coupled electroluminescence; van der Waals LED; transition metal dichalcogenides; h-BN photonics; integrated photonics; DARK EXCITONS; OPTOELECTRONICS; DIODE;
D O I
10.1021/acsphotonics.2c01963
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Optical information processing using photonic integrated circuits is a key goal in the field of nanophotonics. Extensive research efforts have led to remarkable progress in integrating active and passive device functionalities within one single photonic circuit. Still, to date, one of the central components, i.e., light sources, remain a challenge to be integrated. Here, we focus on a photonic platform that is solely based on twodimensional materials to enable the integration of electrically contacted optoelectronic devices inside the light-confining dielectric of photonic structures. We combine light-emitting devices, based on exciton recombination in transition metal dichalcogenides, with hexagonal boron nitride photonic waveguides in a single van der Waals heterostructure. Waveguide-coupled light emission is achieved by sandwiching the light-emitting device between two hexagonal boron nitride slabs and patterning the complete van der Waals stack into a photonic structure. Our demonstration of on-chip light generation and waveguiding is a key component for future integrated van der Waals optoelectronics.
引用
收藏
页码:1328 / 1333
页数:6
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